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SI3457CDV-T1-GE3-VB

VBsemi Elec · MOSFETs · TSOP-6

SI3457CDV-T1-GE3-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	D	passive	Drain terminal of the P-channel MOSFET, rated VDS -30 V with continuous drain current ID -4.8 A at TC = 25 °C and -4.0 A at TA = 25 °C (surface mounted).
2	D	passive	Drain terminal of the P-channel MOSFET, rated VDS -30 V with continuous drain current ID -4.8 A at TC = 25 °C and -4.0 A at TA = 25 °C (surface mounted).
3	G	input	Gate terminal of the P-channel MOSFET, with gate-source voltage limited to ±20 V per the absolute maximum ratings.
4	S	passive	Source terminal of the P-channel MOSFET; continuous source-drain diode current is rated -2.5 A at TC = 25 °C and -1.67 A at TA = 25 °C.
5	D	passive	Drain terminal of the P-channel MOSFET, rated VDS -30 V with continuous drain current ID -4.8 A at TC = 25 °C and -4.0 A at TA = 25 °C (surface mounted).
6	D	passive	Drain terminal of the P-channel MOSFET, rated VDS -30 V with continuous drain current ID -4.8 A at TC = 25 °C and -4.0 A at TA = 25 °C (surface mounted).

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TSOP-6
Category	Transistors/Thyristors
Pins	6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS	-30			V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current (TJ = 150 °C)	ID	-4.8			A	TC = 25 °C	1
Continuous Drain Current (TJ = 150 °C)	ID	-4.1			A	TC = 70 °C	1
Continuous Drain Current (TJ = 150 °C)	ID	-4			A	TA = 25 °C; footnotes b, c	1
Continuous Drain Current (TJ = 150 °C)	ID	-3.5			A	TA = 70 °C; footnotes b, c	1
Pulsed Drain Current	IDM	-20			A		1
Continuous Source-Drain Diode Current	IS	-2.5			A	TC = 25 °C	1
Continuous Source-Drain Diode Current	IS	-1.67			A	TA = 25 °C; footnotes b, c	1
Maximum Power Dissipation	PD			3	W	TC = 25 °C	1
Maximum Power Dissipation	PD			2	W	TC = 70 °C	1
Maximum Power Dissipation	PD			1.3	W	TA = 70 °C; footnotes b, c	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Maximum Junction-to-Ambient, t ≤ 5 s	RthJA		55	62.5	°C/W	t ≤ 5 s; footnotes b, d	1
Maximum Junction-to-Ambient, steady state	RthJA			110	°C/W	Steady state; per footnote d	1
Maximum Junction-to-Foot (Drain), steady state	RthJF		34	41	°C/W	Steady state	1
Drain-Source Breakdown Voltage	VDS	-30			V	VGS = 0 V, ID = -250 µA	2
Gate-Source Threshold Voltage	VGS(th)	-0.5		-2	V	VDS = VGS, ID = -250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ±20 V	2
Zero Gate Voltage Drain Current	IDSS			-1	µA	VDS = -30 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			-10	µA	VDS = -30 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	-20			A	VDS ≤ -5 V, VGS = -10 V	2
Drain-Source On-State Resistance	RDS(on)			0.049	Ω	VGS = -10 V, ID = -4.1 A	2
Drain-Source On-State Resistance	RDS(on)			0.054	Ω	VGS = -4.5 V, ID = -1.0 A	2
Total Gate Charge	Qg		10	15	nC	VDS = -15 V, VGS = -10 V, ID = -4.1 A	2
Total Gate Charge	Qg		5.1	8	nC	VDS = -15 V, VGS = -4.5 V, ID = -4.1 A	2
Turn-On Delay Time	td(on)		40	60	ns	VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω	2
Rise Time	tr		80	120	ns	VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		20	30	ns	VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω	2
Fall Time	tf		12	20	ns	VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω	2
Turn-On Delay Time	td(on)		5	10	ns	VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -10 V, Rg = 1 Ω	2
Rise Time	tr		13	20	ns	VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -10 V, Rg = 1 Ω	2
Fall Time	tf		10	15	ns	VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -10 V, Rg = 1 Ω	2
Body Diode Voltage	VSD		-0.8	-1.2	V	IS = -3.3 A	2
Body Diode Reverse Recovery Time	trr		20	30	ns	IF = -3.3 A, di/dt = 100 A/µs, TJ = 25 °C	2
Body Diode Reverse Recovery Charge	Qrr		20	30	nC	IF = -3.3 A, di/dt = 100 A/µs, TJ = 25 °C	2

CAD (KiCad official)

Symbol: SI3457CDV-T1-GE3-VB
Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
3D model: TSOP-6 (KiCad packages3D, STEP)
3D model files: si3457cdv-t1-ge3-vb-etched.step / si3457cdv-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3457cdv-t1-ge3-vb.step / si3457cdv-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 3385961a796911a6, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF