component
SI3443CDV-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI3443CDV-T1-GE3
Vishay Intertech · MOSFETs · TSOP-6
SI3443CDV-T1-GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal, electrically common with pins 2, 5 and 6; the drain-source voltage is rated -20 V and continuous drain current is -4.7 A at TA = 25 °C. |
| 2 | D | passive | Drain terminal, electrically common with pins 1, 5 and 6; the drain-source voltage is rated -20 V and continuous drain current is -4.7 A at TA = 25 °C. |
| 3 | G | input | Gate terminal; the absolute maximum gate-source voltage is ±12 V. |
| 4 | S | passive | Source terminal; the continuous source-drain diode current is limited to -2.67 A at TC = 25 °C. |
| 5 | D | passive | Drain terminal, electrically common with pins 1, 2 and 6; the drain-source voltage is rated -20 V and continuous drain current is -4.7 A at TA = 25 °C. |
| 6 | D | passive | Drain terminal, electrically common with pins 1, 2 and 5; the drain-source voltage is rated -20 V and continuous drain current is -4.7 A at TA = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -5.97 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -4.6 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | -4.7 | A | TA = 25 °C; footnotes b, c | 1 | ||
| Continuous Drain Current | ID | -3.4 | A | TA = 70 °C; footnotes b, c | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -2.67 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -1.71 | A | TA = 25 °C; footnotes b, c | 1 | ||
| Maximum Power Dissipation | PD | 3.2 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.05 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA = 25 °C; footnotes b, c | 1 | ||
| Maximum Power Dissipation | PD | 1.28 | W | TA = 70 °C; footnotes b, c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 5 s) | RthJA | 51 | 62.5 | °C/W | t ≤ 5 s; footnotes b, d | 1 | |
| Maximum Junction-to-Ambient (steady state) | RthJA | 110 | °C/W | steady state; footnote d | 1 | ||
| Maximum Junction-to-Foot (Drain), Steady State | RthJF | 32 | 39 | °C/W | steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | -20 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.6 | -1.5 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = - 20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -20 | A | VDS - 5 V, VGS = - 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.05 | 0.06 | Ω | VGS = - 4.5 V, ID = - 4.7 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.0692 | 0.084 | Ω | VGS = - 2.7 V, ID = - 3.9 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.083 | 0.1 | Ω | VGS = - 2.5 V, ID = - 3.4 A | 2 | |
| Total Gate Charge | Qg | 8.26 | 12.4 | nC | VDS = - 10 V, VGS = - 5 V, ID = - 4.7 A | 2 | |
| Total Gate Charge | Qg | 7.53 | 11.3 | nC | VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A | 2 | |
| Gate Resistance | Rg | 1.7 | 8.5 | 12.75 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 27 | 41 | ns | VDD = - 10 V, RL = 2.12 Ω, ID - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 59 | 88.5 | ns | VDD = - 10 V, RL = 2.12 Ω, ID - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 30 | 45 | ns | VDD = - 10 V, RL = 2.12 Ω, ID - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 11 | 16.5 | ns | VDD = - 10 V, RL = 2.12 Ω, ID - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | -2.67 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | -20 | A | 2 | |||
| Body Diode Voltage | VSD | -0.8 | -1.2 | V | IS = - 1.7 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 20 | 30 | ns | IF = - 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 9 | 13.5 | nC | IF = - 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| VDS Temperature Coefficient | VDS/TJ | -18.8 | mV/°C | ID = - 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | VGS(th)/TJ | 3.25 | mV/°C | 2 | |||
| Forward Transconductance | gfs | 15 | S | VDS = - 10 V, ID = - 4.7 A | 2 | ||
| Input Capacitance | Ciss | 610 | pF | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 132 | pF | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 105 | pF | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 1.53 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 2.37 | nC | 2 | |||
| Reverse Recovery Fall Time | ta | 15 | ns | 2 | |||
| Reverse Recovery Rise Time | tb | 5.1 | ns | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | pins 1,2,5, and 6. The copper plane connects the drain pins | 8 |
CAD (KiCad official)
- Symbol:
SI3443CDV-T1-GE3 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
si3443cdv-t1-ge3-etched.step/si3443cdv-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si3443cdv-t1-ge3.step/si3443cdv-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (11 pp, sha256
a08bfb979cd4eaca, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI3443CDV-T1-GE3
**Vishay Intertech** · MOSFETs · TSOP-6
SI3443CDV-T1-GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal, electrically common with pins 2, 5 and 6; the drain-source voltage is rated -20 V and continuous drain current is -4.7 A at TA = 25 °C. |
| 2 | D | passive | Drain terminal, electrically common with pins 1, 5 and 6; the drain-source voltage is rated -20 V and continuous drain current is -4.7 A at TA = 25 °C. |
| 3 | G | input | Gate terminal; the absolute maximum gate-source voltage is ±12 V. |
| 4 | S | passive | Source terminal; the continuous source-drain diode current is limited to -2.67 A at TC = 25 °C. |
| 5 | D | passive | Drain terminal, electrically common with pins 1, 2 and 6; the drain-source voltage is rated -20 V and continuous drain current is -4.7 A at TA = 25 °C. |
| 6 | D | passive | Drain terminal, electrically common with pins 1, 2 and 5; the drain-source voltage is rated -20 V and continuous drain current is -4.7 A at TA = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | -5.97 | A | TJ = 150 °C, TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | -4.6 | A | TJ = 150 °C, TC = 70 °C | 1 |
| Continuous Drain Current | ID | | | -4.7 | A | TA = 25 °C; footnotes b, c | 1 |
| Continuous Drain Current | ID | | | -3.4 | A | TA = 70 °C; footnotes b, c | 1 |
| Pulsed Drain Current | IDM | | | -20 | A | | 1 |
| Continuous Source-Drain Diode Current | IS | | | -2.67 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS | | | -1.71 | A | TA = 25 °C; footnotes b, c | 1 |
| Maximum Power Dissipation | PD | | | 3.2 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 2.05 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD | | | 2 | W | TA = 25 °C; footnotes b, c | 1 |
| Maximum Power Dissipation | PD | | | 1.28 | W | TA = 70 °C; footnotes b, c | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient (t ≤ 5 s) | RthJA | | 51 | 62.5 | °C/W | t ≤ 5 s; footnotes b, d | 1 |
| Maximum Junction-to-Ambient (steady state) | RthJA | | | 110 | °C/W | steady state; footnote d | 1 |
| Maximum Junction-to-Foot (Drain), Steady State | RthJF | | 32 | 39 | °C/W | steady state | 1 |
| Drain-Source Breakdown Voltage | VDS | -20 | | | V | VGS = 0 V, ID = - 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -0.6 | | -1.5 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = - 20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -10 | µA | VDS = - 20 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | -20 | | | A | VDS - 5 V, VGS = - 4.5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.05 | 0.06 | Ω | VGS = - 4.5 V, ID = - 4.7 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.0692 | 0.084 | Ω | VGS = - 2.7 V, ID = - 3.9 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.083 | 0.1 | Ω | VGS = - 2.5 V, ID = - 3.4 A | 2 |
| Total Gate Charge | Qg | | 8.26 | 12.4 | nC | VDS = - 10 V, VGS = - 5 V, ID = - 4.7 A | 2 |
| Total Gate Charge | Qg | | 7.53 | 11.3 | nC | VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A | 2 |
| Gate Resistance | Rg | 1.7 | 8.5 | 12.75 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 27 | 41 | ns | VDD = - 10 V, RL = 2.12 Ω, ID - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 59 | 88.5 | ns | VDD = - 10 V, RL = 2.12 Ω, ID - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 30 | 45 | ns | VDD = - 10 V, RL = 2.12 Ω, ID - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 11 | 16.5 | ns | VDD = - 10 V, RL = 2.12 Ω, ID - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS | | | -2.67 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM | | | -20 | A | | 2 |
| Body Diode Voltage | VSD | | -0.8 | -1.2 | V | IS = - 1.7 A | 2 |
| Body Diode Reverse Recovery Time | trr | | 20 | 30 | ns | IF = - 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 9 | 13.5 | nC | IF = - 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| VDS Temperature Coefficient | VDS/TJ | | -18.8 | | mV/°C | ID = - 250 µA | 2 |
| VGS(th) Temperature Coefficient | VGS(th)/TJ | | 3.25 | | mV/°C | | 2 |
| Forward Transconductance | gfs | | 15 | | S | VDS = - 10 V, ID = - 4.7 A | 2 |
| Input Capacitance | Ciss | | 610 | | pF | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 132 | | pF | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 105 | | pF | VDS = - 10 V, VGS = 0 V, f = 1 MHz | 2 |
| Gate-Source Charge | Qgs | | 1.53 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 2.37 | | nC | | 2 |
| Reverse Recovery Fall Time | ta | | 15 | | ns | | 2 |
| Reverse Recovery Rise Time | tb | | 5.1 | | ns | | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | | pins 1,2,5, and 6. The copper plane connects the drain pins | 8 |
## CAD (KiCad official)
- Symbol: `SI3443CDV-T1-GE3`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `si3443cdv-t1-ge3-etched.step` / `si3443cdv-t1-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si3443cdv-t1-ge3.step` / `si3443cdv-t1-ge3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586205451582623744) (11 pp, sha256 `a08bfb979cd4eaca`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si3443cdv-t1-ge3-datasheet.pdf)