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SI3443CDV-T1-GE3

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Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI3443CDV-T1-GE3

Vishay Intertech · MOSFETs · TSOP-6

SI3443CDV-T1-GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal, electrically common with pins 2, 5 and 6; the drain-source voltage is rated -20 V and continuous drain current is -4.7 A at TA = 25 °C.
2 D passive Drain terminal, electrically common with pins 1, 5 and 6; the drain-source voltage is rated -20 V and continuous drain current is -4.7 A at TA = 25 °C.
3 G input Gate terminal; the absolute maximum gate-source voltage is ±12 V.
4 S passive Source terminal; the continuous source-drain diode current is limited to -2.67 A at TC = 25 °C.
5 D passive Drain terminal, electrically common with pins 1, 2 and 6; the drain-source voltage is rated -20 V and continuous drain current is -4.7 A at TA = 25 °C.
6 D passive Drain terminal, electrically common with pins 1, 2 and 5; the drain-source voltage is rated -20 V and continuous drain current is -4.7 A at TA = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -5.97 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -4.6 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID -4.7 A TA = 25 °C; footnotes b, c 1
Continuous Drain Current ID -3.4 A TA = 70 °C; footnotes b, c 1
Pulsed Drain Current IDM -20 A 1
Continuous Source-Drain Diode Current IS -2.67 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1.71 A TA = 25 °C; footnotes b, c 1
Maximum Power Dissipation PD 3.2 W TC = 25 °C 1
Maximum Power Dissipation PD 2.05 W TC = 70 °C 1
Maximum Power Dissipation PD 2 W TA = 25 °C; footnotes b, c 1
Maximum Power Dissipation PD 1.28 W TA = 70 °C; footnotes b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (t ≤ 5 s) RthJA 51 62.5 °C/W t ≤ 5 s; footnotes b, d 1
Maximum Junction-to-Ambient (steady state) RthJA 110 °C/W steady state; footnote d 1
Maximum Junction-to-Foot (Drain), Steady State RthJF 32 39 °C/W steady state 1
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.6 -1.5 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -20 A VDS - 5 V, VGS = - 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.05 0.06 Ω VGS = - 4.5 V, ID = - 4.7 A 2
Drain-Source On-State Resistance RDS(on) 0.0692 0.084 Ω VGS = - 2.7 V, ID = - 3.9 A 2
Drain-Source On-State Resistance RDS(on) 0.083 0.1 Ω VGS = - 2.5 V, ID = - 3.4 A 2
Total Gate Charge Qg 8.26 12.4 nC VDS = - 10 V, VGS = - 5 V, ID = - 4.7 A 2
Total Gate Charge Qg 7.53 11.3 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A 2
Gate Resistance Rg 1.7 8.5 12.75 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 27 41 ns VDD = - 10 V, RL = 2.12 Ω, ID - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 59 88.5 ns VDD = - 10 V, RL = 2.12 Ω, ID - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = - 10 V, RL = 2.12 Ω, ID - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 11 16.5 ns VDD = - 10 V, RL = 2.12 Ω, ID - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -2.67 A TC = 25 °C 2
Pulse Diode Forward Current ISM -20 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = - 1.7 A 2
Body Diode Reverse Recovery Time trr 20 30 ns IF = - 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 9 13.5 nC IF = - 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient VDS/TJ -18.8 mV/°C ID = - 250 µA 2
VGS(th) Temperature Coefficient VGS(th)/TJ 3.25 mV/°C 2
Forward Transconductance gfs 15 S VDS = - 10 V, ID = - 4.7 A 2
Input Capacitance Ciss 610 pF VDS = - 10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 132 pF VDS = - 10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 105 pF VDS = - 10 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 1.53 nC 2
Gate-Drain Charge Qgd 2.37 nC 2
Reverse Recovery Fall Time ta 15 ns 2
Reverse Recovery Rise Time tb 5.1 ns 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper pins 1,2,5, and 6. The copper plane connects the drain pins 8

CAD (KiCad official)

  • Symbol: SI3443CDV-T1-GE3
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: si3443cdv-t1-ge3-etched.step / si3443cdv-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3443cdv-t1-ge3.step / si3443cdv-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (11 pp, sha256 a08bfb979cd4eaca, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF