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SI3440DV-T1-E3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownSI3440DV-T1-E3
Vishay Intertech · MOSFETs · TSOP-6
SI3440DV-T1-E3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal; pins 1, 2, 5 and 6 are connected together as the drain, rated for VDS = 150 V. |
| 2 | D | passive | Drain terminal; pins 1, 2, 5 and 6 are connected together as the drain, rated for VDS = 150 V. |
| 3 | G | input | Gate terminal; gate-source voltage is rated at ±20 V. |
| 4 | S | passive | Source terminal; continuous source (diode conduction) current is rated at 1.7 A for 5 s and 1.0 A steady state at TA = 25 °C. |
| 5 | D | passive | Drain terminal; pins 1, 2, 5 and 6 are connected together as the drain, rated for VDS = 150 V. |
| 6 | D | passive | Drain terminal; pins 1, 2, 5 and 6 are connected together as the drain, rated for VDS = 150 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 150 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS = 150 V, VGS = 0 V, TJ = 85 °C | 2 | ||
| On-State Drain Current | ID(on) | 4 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.31 | 0.375 | Ω | VGS = 10 V, ID = 1.5 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.33 | 0.4 | Ω | VGS = 6.0 V, ID = 1.4 A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | IS = 1.7 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 5.4 | 8 | nC | VDS = 75 V, VGS = 10 V, ID = 1.5 A | 2 | |
| Gate Resistance | Rg | 4 | 9 | 15 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 8 | 15 | ns | VDD = 75 V, RL = 75 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Rise Time | tr | 10 | 15 | ns | VDD = 75 V, RL = 75 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 20 | 30 | ns | VDD = 75 V, RL = 75 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Fall Time | tf | 15 | 25 | ns | VDD = 75 V, RL = 75 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 40 | 60 | ns | IF = 1.7 A, dI/dt = 100 A/µs | 2 | |
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TJ = 175 °C), TA = 25 °C, 5 s | ID | 1.5 | A | TJ = 175 °C, TA = 25 °C, t ≤ 5 s | 1 | ||
| Continuous Drain Current (TJ = 175 °C), TA = 25 °C, steady state | ID | 1.2 | A | TJ = 175 °C, TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current (TJ = 175 °C), TA = 85 °C, 5 s | ID | 1.1 | A | TJ = 175 °C, TA = 85 °C, t ≤ 5 s | 1 | ||
| Continuous Drain Current (TJ = 175 °C), TA = 85 °C, steady state | ID | 0.8 | A | TJ = 175 °C, TA = 85 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | 6 | A | 1 | |||
| Single Avalanche Current | IAS | 4 | A | L = 0.1 mH | 1 | ||
| Single Avalanche Energy | EAS | 0.8 | mJ | L = 0.1 mH, duty cycle ≤ 1 % | 1 | ||
| Continuous Source Current (Diode Conduction), 5 s | IS | 1.7 | A | t ≤ 5 s | 1 | ||
| Continuous Source Current (Diode Conduction), steady state | IS | 1 | A | Steady State | 1 | ||
| Maximum Power Dissipation, TA = 25 °C, 5 s | PD | 2 | W | TA = 25 °C, t ≤ 5 s | 1 | ||
| Maximum Power Dissipation, TA = 25 °C, steady state | PD | 1.14 | W | TA = 25 °C, Steady State | 1 | ||
| Maximum Power Dissipation, TA = 85 °C, 5 s | PD | 1 | W | TA = 85 °C, t ≤ 5 s | 1 | ||
| Maximum Power Dissipation, TA = 85 °C, steady state | PD | 0.59 | W | TA = 85 °C, Steady State | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 45 | 62.5 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Ambient | RthJA | 90 | 110 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 25 | 30 | °C/W | Steady State | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | pins 1,2,5, and 6. The copper plane connects the drain pins | 7 |
CAD (KiCad official)
- Symbol:
SI3440DV-T1-E3 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
si3440dv-t1-e3-etched.step/si3440dv-t1-e3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si3440dv-t1-e3.step/si3440dv-t1-e3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (10 pp, sha256
05e30ceaff339682, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).