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SI2369DS-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Ray si2369ds-t1-ge3: specified limits as data (metadata.characteristics, 39 rows from the datasheet) 86912dd 17d ago

SI2369DS-T1-GE3

Vishay Intertech · MOSFETs · SOT-23

SI2369DS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; the gate-source voltage is limited to ±20 V per the absolute maximum ratings.
2 S passive Source of the P-channel MOSFET; the continuous source-drain diode current is rated at -2.1 A at TC = 25 °C (-1 A at TA = 25 °C) per the absolute maximum ratings.
3 D passive Drain of the P-channel MOSFET, rated at VDS = -30 V; the drain pin also provides the thermal connection from the package to the PC board.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (TJ = 150 °C) ID -7.6 A TC = 25 °C 1
Continuous Drain Current (TJ = 150 °C) ID -6.1 A TC = 70 °C 1
Continuous Drain Current (TJ = 150 °C) ID -5.4 A TA = 25 °C 1
Continuous Drain Current (TJ = 150 °C) ID -4.3 A TA = 70 °C 1
Pulsed Drain Current IDM -80 A t = 100 µs 1
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1 A TA = 25 °C 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W TA = 25 °C 1
Maximum Power Dissipation PD 0.8 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 75 100 °C/W t ≤ 5 s 1
Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1.2 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -25 A VDS -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.024 0.029 Ω VGS = -10 V, ID = -5.4 A 2
Drain-Source On-State Resistance RDS(on) 0.028 0.034 Ω VGS = -6 V, ID = -5 A 2
Drain-Source On-State Resistance RDS(on) 0.033 0.04 Ω VGS = -4.5 V, ID = -4.6 A 2
Gate Resistance Rg 1.5 7.7 15.4 Ω f = 1 MHz 2
Total Gate Charge Qg 24 36 nC VDS = -15 V, VGS = -10 V, ID = -5.4 A 2
Total Gate Charge Qg 11.4 17 nC VDS = -15 V, VGS = -4.5 V, ID = -5.4 A 2
Turn-On Delay Time td(on) 13 20 ns VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 4 8 ns VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 38 57 ns VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 6 12 ns VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 28 42 ns VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 16 24 ns VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 10 20 ns VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -4.3 A, VGS 0 V 2
Body Diode Reverse Recovery Time trr 15 23 ns IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 7 14 nC IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI2369DS-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2369ds-t1-ge3-etched.step / si2369ds-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2369ds-t1-ge3.step / si2369ds-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (10 pp, sha256 d33b0f1c390fabd8, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF