component
SI2369DS-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si2369ds-t1-ge3: specified limits as data (metadata.characteristics, 39 rows from the datasheet)
2 files changed
+522−1
README.md+46@@ -21,6 +21,52 @@ SI2369DS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | -30 | | | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current (TJ = 150 °C) | ID | -7.6 | | | A | TC = 25 °C | 1 |+| Continuous Drain Current (TJ = 150 °C) | ID | -6.1 | | | A | TC = 70 °C | 1 |+| Continuous Drain Current (TJ = 150 °C) | ID | -5.4 | | | A | TA = 25 °C | 1 |+| Continuous Drain Current (TJ = 150 °C) | ID | -4.3 | | | A | TA = 70 °C | 1 |+| Pulsed Drain Current | IDM | -80 | | | A | t = 100 µs | 1 |+| Continuous Source-Drain Diode Current | IS | -2.1 | | | A | TC = 25 °C | 1 |+| Continuous Source-Drain Diode Current | IS | -1 | | | A | TA = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 2.5 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 1.6 | W | TC = 70 °C | 1 |+| Maximum Power Dissipation | PD | | | 1.25 | W | TA = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 0.8 | W | TA = 70 °C | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient | RthJA | | 75 | 100 | °C/W | t ≤ 5 s | 1 |+| Maximum Junction-to-Foot (Drain) Steady State | RthJF | | 40 | 50 | °C/W | Steady state | 1 |+| Drain-Source Breakdown Voltage | VDS | -30 | | | V | VGS = 0 V, ID = -250 µA | 2 |+| Gate-Source Threshold Voltage | VGS(th) | -1.2 | | -2.5 | V | VDS = VGS, ID = -250 µA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = -30 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -5 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 |+| On-State Drain Current | ID(on) | -25 | | | A | VDS -5 V, VGS = -10 V | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.024 | 0.029 | Ω | VGS = -10 V, ID = -5.4 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.028 | 0.034 | Ω | VGS = -6 V, ID = -5 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.033 | 0.04 | Ω | VGS = -4.5 V, ID = -4.6 A | 2 |+| Gate Resistance | Rg | 1.5 | 7.7 | 15.4 | Ω | f = 1 MHz | 2 |+| Total Gate Charge | Qg | | 24 | 36 | nC | VDS = -15 V, VGS = -10 V, ID = -5.4 A | 2 |+| Total Gate Charge | Qg | | 11.4 | 17 | nC | VDS = -15 V, VGS = -4.5 V, ID = -5.4 A | 2 |+| Turn-On Delay Time | td(on) | | 13 | 20 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω | 2 |+| Rise Time | tr | | 4 | 8 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 38 | 57 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω | 2 |+| Fall Time | tf | | 6 | 12 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω | 2 |+| Turn-On Delay Time | td(on) | | 28 | 42 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |+| Rise Time | tr | | 16 | 24 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 30 | 45 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |+| Fall Time | tf | | 10 | 20 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω | 2 |+| Body Diode Voltage | VSD | | -0.8 | -1.2 | V | IS = -4.3 A, VGS 0 V | 2 |+| Body Diode Reverse Recovery Time | trr | | 15 | 23 | ns | IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 7 | 14 | nC | IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |+ ## CAD (KiCad official) - Symbol: `SI2369DS-T1-GE3`
page.json+476−1@@ -150,6 +150,481 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "d33b0f1c390fabd8",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TJ = 150 °C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -7.6,+ "typ": null,+ "max": null,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TJ = 150 °C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -6.1,+ "typ": null,+ "max": null,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TJ = 150 °C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -5.4,+ "typ": null,+ "max": null,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (TJ = 150 °C)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -4.3,+ "typ": null,+ "max": null,+ "conditions": "TA = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -80,+ "typ": null,+ "max": null,+ "conditions": "t = 100 µs",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -2.1,+ "typ": null,+ "max": null,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1,+ "typ": null,+ "max": null,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "TA = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 75,+ "max": 100,+ "conditions": "t ≤ 5 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Foot (Drain) Steady State",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 40,+ "max": 50,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1.2,+ "typ": null,+ "max": -2.5,+ "conditions": "VDS = VGS, ID = -250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -30 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "VDS = -30 V, VGS = 0 V, TJ = 55 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": -25,+ "typ": null,+ "max": null,+ "conditions": "VDS -5 V, VGS = -10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.024,+ "max": 0.029,+ "conditions": "VGS = -10 V, ID = -5.4 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.028,+ "max": 0.034,+ "conditions": "VGS = -6 V, ID = -5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.033,+ "max": 0.04,+ "conditions": "VGS = -4.5 V, ID = -4.6 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 1.5,+ "typ": 7.7,+ "max": 15.4,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 24,+ "max": 36,+ "conditions": "VDS = -15 V, VGS = -10 V, ID = -5.4 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 11.4,+ "max": 17,+ "conditions": "VDS = -15 V, VGS = -4.5 V, ID = -5.4 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": 20,+ "conditions": "VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 4,+ "max": 8,+ "conditions": "VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 38,+ "max": 57,+ "conditions": "VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 6,+ "max": 12,+ "conditions": "VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 28,+ "max": 42,+ "conditions": "VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": 24,+ "conditions": "VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 30,+ "max": 45,+ "conditions": "VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": 20,+ "conditions": "VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.8,+ "max": -1.2,+ "conditions": "IS = -4.3 A, VGS 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 15,+ "max": 23,+ "conditions": "IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 7,+ "max": 14,+ "conditions": "IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +666,4 @@ "visibility": { "public": true }-}+}