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Si2366DS-T1-GE3-HXY

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by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Si2366DS-T1-GE3-HXY

HXY MOSFET · MOSFETs · SOT-23

Si2366DS-T1-GE3-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET, with gate-source voltage rated at ±20 V in the absolute maximum ratings.
2 D passive Drain of the MOSFET, rated for 30 V drain-source voltage and 4 A continuous drain current.
3 S passive Source of the MOSFET, the reference terminal for the 30 V drain-source and ±20 V gate-source ratings.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 4 A 1
Drain Current-Pulsed IDM 16.4 A Note 1 1
Maximum Power Dissipation PD 1 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 125 ℃/W Note 2 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V, 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 29 38 mΩ VGS=10V, ID=4A 2
Static Drain-Source on-Resistance RDS(on) 45 65 mΩ VGS=4.5V, ID=3A 2
Maximum Continuous Drain to Source Diode Forward Current IS 4 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 16 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=4A 2

CAD (KiCad official)

  • Symbol: Si2366DS-T1-GE3-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2366ds-t1-ge3-hxy-etched.step / si2366ds-t1-ge3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2366ds-t1-ge3-hxy.step / si2366ds-t1-ge3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 1bef80a103ba5f33, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF