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Si2366DS-T1-GE3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSi2366DS-T1-GE3-HXY
HXY MOSFET · MOSFETs · SOT-23
Si2366DS-T1-GE3-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET, with gate-source voltage rated at ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain of the MOSFET, rated for 30 V drain-source voltage and 4 A continuous drain current. |
| 3 | S | passive | Source of the MOSFET, the reference terminal for the 30 V drain-source and ±20 V gate-source ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 4 | A | 1 | |||
| Drain Current-Pulsed | IDM | 16.4 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 125 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V, | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 29 | 38 | mΩ | VGS=10V, ID=4A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 45 | 65 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 4 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 16 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=4A | 2 |
CAD (KiCad official)
- Symbol:
Si2366DS-T1-GE3-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2366ds-t1-ge3-hxy-etched.step/si2366ds-t1-ge3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2366ds-t1-ge3-hxy.step/si2366ds-t1-ge3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
1bef80a103ba5f33, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).