component
SI2333CDS
Public Made by Adomby adom
UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI2333CDS
UMW · MOSFETs · SOT-23
SI2333CDS from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the P-channel MOSFET; the datasheet limits the gate-source voltage to ±8 V (VGS) and specifies VGS(th) of -0.4 V to -1 V. |
| 2 | S | passive | SOURCE terminal of the P-channel MOSFET; the device is rated for VDS = -12 V with continuous source-drain diode current IS of -1 A at TA = 25 °C. |
| 3 | D | passive | DRAIN terminal of the P-channel MOSFET; the device is rated for VDS = -12 V with continuous drain current ID of -5.1 A at TA = 25 °C (surface mounted on 1" x 1" FR4). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -12 | V | VDS=0V, ID=-250μA | 3 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.4 | -1 | V | VDS=VGS, ID=-250μA | 3 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±8V | 3 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-12V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | -10 | µA | VDS=-12V, VGS=0V, TJ=55°C | 3 | ||
| On-State Drain Current | ID(ON) | -20 | A | VDS≤-5V, VGS=-4.5V | 3 | ||
| Drain-Source On-State Resistance | RDS(ON) | 28.5 | 35 | mΩ | VGS=-4.5V, ID=-5.1A | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | 36 | 45 | mΩ | VGS=-2.5V, ID=-4.5A | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | 46 | 59 | mΩ | VDS=-1.8V, ID=-2A | 3 | |
| Continuous Source-Drain Diode Current | IS | -1 | A | TC=25°C | 4 | ||
| Pulse Diode Forward Current | ISM | -20 | A | Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % | 4 | ||
| Body Diode Voltage | VSD | -0.7 | -1.2 | V | IS=-1A | 4 | |
| Body Diode Reverse Recovery Time | trr | 32 | 50 | ns | IF=-1A, dI/dt=100A/μs | 4 | |
| Body Diode Reverse Recovery Charge | Qrr | 20 | 40 | nC | IF=-1A, dI/dt=100A/μs | 4 | |
| Drain-Source Voltage | VDS | -12 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -8 | 8 | V | TA=25°C | 1 | |
| Continuous Drain Current (TJ = 150 °C) | ID | -7.1 | A | TC=25°C | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | -5.7 | A | TC=70°C | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | -5.1 | A | TA=25°C (notes b, c) | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | -4 | A | TA=70°C (notes b, c) | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -1 | A | TA=25°C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -0.63 | A | TA=70°C (notes b, c) | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TC=25°C | 2 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TC=70°C | 2 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA=25°C (notes b, c) | 2 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA=70°C (notes b, c) | 2 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 2 | ||
| Maximum Junction-to-Ambient | RthJA | 75 | 100 | °C/W | t ≤5s | 2 | |
| Maximum Junction-to-Ambient (steady state) | RthJA | 166 | °C/W | Steady-State (note d) | 2 | ||
| Maximum Junction-to-Foot (Drain) | RthJF | 40 | 50 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
SI2333CDS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2333cds-etched.step/si2333cds-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2333cds.step/si2333cds.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
1901e0656b3a9671, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI2333CDS
**UMW** · MOSFETs · SOT-23
SI2333CDS from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the P-channel MOSFET; the datasheet limits the gate-source voltage to ±8 V (VGS) and specifies VGS(th) of -0.4 V to -1 V. |
| 2 | S | passive | SOURCE terminal of the P-channel MOSFET; the device is rated for VDS = -12 V with continuous source-drain diode current IS of -1 A at TA = 25 °C. |
| 3 | D | passive | DRAIN terminal of the P-channel MOSFET; the device is rated for VDS = -12 V with continuous drain current ID of -5.1 A at TA = 25 °C (surface mounted on 1" x 1" FR4). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -12 | | | V | VDS=0V, ID=-250μA | 3 |
| Gate-Source Threshold Voltage | VGS(th) | -0.4 | | -1 | V | VDS=VGS, ID=-250μA | 3 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±8V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS=-12V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | | | -10 | µA | VDS=-12V, VGS=0V, TJ=55°C | 3 |
| On-State Drain Current | ID(ON) | -20 | | | A | VDS≤-5V, VGS=-4.5V | 3 |
| Drain-Source On-State Resistance | RDS(ON) | | 28.5 | 35 | mΩ | VGS=-4.5V, ID=-5.1A | 3 |
| Drain-Source On-State Resistance | RDS(ON) | | 36 | 45 | mΩ | VGS=-2.5V, ID=-4.5A | 3 |
| Drain-Source On-State Resistance | RDS(ON) | | 46 | 59 | mΩ | VDS=-1.8V, ID=-2A | 3 |
| Continuous Source-Drain Diode Current | IS | | | -1 | A | TC=25°C | 4 |
| Pulse Diode Forward Current | ISM | | | -20 | A | Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % | 4 |
| Body Diode Voltage | VSD | | -0.7 | -1.2 | V | IS=-1A | 4 |
| Body Diode Reverse Recovery Time | trr | | 32 | 50 | ns | IF=-1A, dI/dt=100A/μs | 4 |
| Body Diode Reverse Recovery Charge | Qrr | | 20 | 40 | nC | IF=-1A, dI/dt=100A/μs | 4 |
| Drain-Source Voltage | VDS | | | -12 | V | TA=25°C | 1 |
| Gate-Source Voltage | VGS | -8 | | 8 | V | TA=25°C | 1 |
| Continuous Drain Current (TJ = 150 °C) | ID | | | -7.1 | A | TC=25°C | 1 |
| Continuous Drain Current (TJ = 150 °C) | ID | | | -5.7 | A | TC=70°C | 1 |
| Continuous Drain Current (TJ = 150 °C) | ID | | | -5.1 | A | TA=25°C (notes b, c) | 1 |
| Continuous Drain Current (TJ = 150 °C) | ID | | | -4 | A | TA=70°C (notes b, c) | 1 |
| Pulsed Drain Current | IDM | | | -20 | A | | 1 |
| Continuous Source-Drain Diode Current | IS | | | -1 | A | TA=25°C | 1 |
| Continuous Source-Drain Diode Current | IS | | | -0.63 | A | TA=70°C (notes b, c) | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | W | TC=25°C | 2 |
| Maximum Power Dissipation | PD | | | 1.6 | W | TC=70°C | 2 |
| Maximum Power Dissipation | PD | | | 1.25 | W | TA=25°C (notes b, c) | 2 |
| Maximum Power Dissipation | PD | | | 0.8 | W | TA=70°C (notes b, c) | 2 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 2 |
| Maximum Junction-to-Ambient | RthJA | | 75 | 100 | °C/W | t ≤5s | 2 |
| Maximum Junction-to-Ambient (steady state) | RthJA | | | 166 | °C/W | Steady-State (note d) | 2 |
| Maximum Junction-to-Foot (Drain) | RthJF | | 40 | 50 | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `SI2333CDS`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2333cds-etched.step` / `si2333cds-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2333cds.step` / `si2333cds.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757271843571015680) (10 pp, sha256 `1901e0656b3a9671`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si2333cds-datasheet.pdf)