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Contents

README

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SI2333CDS

UMW · MOSFETs · SOT-23

SI2333CDS from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the P-channel MOSFET; the datasheet limits the gate-source voltage to ±8 V (VGS) and specifies VGS(th) of -0.4 V to -1 V.
2 S passive SOURCE terminal of the P-channel MOSFET; the device is rated for VDS = -12 V with continuous source-drain diode current IS of -1 A at TA = 25 °C.
3 D passive DRAIN terminal of the P-channel MOSFET; the device is rated for VDS = -12 V with continuous drain current ID of -5.1 A at TA = 25 °C (surface mounted on 1" x 1" FR4).

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -12 V VDS=0V, ID=-250μA 3
Gate-Source Threshold Voltage VGS(th) -0.4 -1 V VDS=VGS, ID=-250μA 3
Gate-Source Leakage IGSS -100 100 nA VDS=0V, VGS=±8V 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-12V, VGS=0V 3
Zero Gate Voltage Drain Current (TJ=55°C) IDSS -10 µA VDS=-12V, VGS=0V, TJ=55°C 3
On-State Drain Current ID(ON) -20 A VDS≤-5V, VGS=-4.5V 3
Drain-Source On-State Resistance RDS(ON) 28.5 35 mΩ VGS=-4.5V, ID=-5.1A 3
Drain-Source On-State Resistance RDS(ON) 36 45 mΩ VGS=-2.5V, ID=-4.5A 3
Drain-Source On-State Resistance RDS(ON) 46 59 mΩ VDS=-1.8V, ID=-2A 3
Continuous Source-Drain Diode Current IS -1 A TC=25°C 4
Pulse Diode Forward Current ISM -20 A Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % 4
Body Diode Voltage VSD -0.7 -1.2 V IS=-1A 4
Body Diode Reverse Recovery Time trr 32 50 ns IF=-1A, dI/dt=100A/μs 4
Body Diode Reverse Recovery Charge Qrr 20 40 nC IF=-1A, dI/dt=100A/μs 4
Drain-Source Voltage VDS -12 V TA=25°C 1
Gate-Source Voltage VGS -8 8 V TA=25°C 1
Continuous Drain Current (TJ = 150 °C) ID -7.1 A TC=25°C 1
Continuous Drain Current (TJ = 150 °C) ID -5.7 A TC=70°C 1
Continuous Drain Current (TJ = 150 °C) ID -5.1 A TA=25°C (notes b, c) 1
Continuous Drain Current (TJ = 150 °C) ID -4 A TA=70°C (notes b, c) 1
Pulsed Drain Current IDM -20 A 1
Continuous Source-Drain Diode Current IS -1 A TA=25°C 1
Continuous Source-Drain Diode Current IS -0.63 A TA=70°C (notes b, c) 1
Maximum Power Dissipation PD 2.5 W TC=25°C 2
Maximum Power Dissipation PD 1.6 W TC=70°C 2
Maximum Power Dissipation PD 1.25 W TA=25°C (notes b, c) 2
Maximum Power Dissipation PD 0.8 W TA=70°C (notes b, c) 2
Junction and Storage Temperature Range TJ,TSTG -55 150 °C 2
Maximum Junction-to-Ambient RthJA 75 100 °C/W t ≤5s 2
Maximum Junction-to-Ambient (steady state) RthJA 166 °C/W Steady-State (note d) 2
Maximum Junction-to-Foot (Drain) RthJF 40 50 °C/W 2

CAD (KiCad official)

  • Symbol: SI2333CDS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2333cds-etched.step / si2333cds-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2333cds.step / si2333cds.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 1901e0656b3a9671, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF