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SI2319DDS-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2319DDS-T1-GE3
Vishay Intertech · MOSFETs · SOT-23
SI2319DDS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for gate-source voltage VGS of ±20 V. |
| 2 | S | passive | Source of the P-channel MOSFET, with continuous source-drain diode current IS of -1.4 A at TC = 25 °C. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for drain-source voltage VDS of -40 V and continuous drain current ID of -3.6 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -40 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | -3.6 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous drain current | ID | -2.9 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Continuous drain current | ID | -2.7 | A | TJ = 150 °C, TA = 25 °C, notes b, c | 1 | ||
| Continuous drain current | ID | -2.2 | A | TJ = 150 °C, TA = 70 °C, notes b, c | 1 | ||
| Pulsed drain current | IDM | -15 | A | t = 100 μs | 1 | ||
| Continuous source-drain diode current | IS | -1.4 | A | TC = 25 °C | 1 | ||
| Continuous source-drain diode current | IS | -0.8 | A | TA = 25 °C, notes b, c | 1 | ||
| Single pulse avalanche current | IAS | -5 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 1.25 | mJ | 1 | |||
| Maximum power dissipation | IP | 1.7 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | IP | 1.1 | W | TC = 70 °C | 1 | ||
| Maximum power dissipation | IP | 1 | W | TA = 25 °C, notes b, c | 1 | ||
| Maximum power dissipation | IP | 0.6 | W | TA = 70 °C, notes b, c | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum junction-to-ambient | RthJA | 100 | 130 | °C/W | t ≤ 5 s, note b | 1 | |
| Maximum junction-to-case (drain) | RthJF | 60 | 75 | °C/W | Steady state | 1 | |
| Maximum junction-to-ambient (steady state) | RthJA | 175 | °C/W | Steady state, note d | 1 | ||
| Drain-source breakdown voltage | VDS | -40 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-source leakage | IGSS | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -40 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | -15 | μA | VDS = -40 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-state drain current | ID(on) | -10 | A | VDS ≤ -10 V, VGS = -10 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.062 | 0.075 | Ω | VGS = -10 V, ID = -2.7 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.081 | 0.1 | Ω | VGS = -4.5 V, ID = -2.4 A | 2 | |
| Total gate charge | Qg | 12.5 | 19 | nC | VDS = -20 V, VGS = -10 V, ID = -2.7 A | 2 | |
| Total gate charge | Qg | 6 | 12 | nC | VDS = -20 V, VGS = -4.5 V, ID = -2.7 A | 2 | |
| Gate resistance | Rg | 2 | 10 | 20 | Ω | f = 1 MHz | 2 |
| Turn-on delay time | td(on) | 10 | 20 | ns | VDD = -20 V, RL = 9.1 Ω, ID ≤ -2.2 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 20 | 30 | ns | VDD = -20 V, RL = 9.1 Ω, ID ≤ -2.2 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 20 | 30 | ns | VDD = -20 V, RL = 9.1 Ω, ID ≤ -2.2 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 12 | 24 | ns | VDD = -20 V, RL = 9.1 Ω, ID ≤ -2.2 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-on delay time | td(on) | 30 | 45 | ns | VDD = -20 V, RL = 9.1 Ω, ID ≤ -2.2 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 32 | 48 | ns | VDD = -20 V, RL = 9.1 Ω, ID ≤ -2.2 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 15 | 30 | ns | VDD = -20 V, RL = 9.1 Ω, ID ≤ -2.2 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Continuous source-drain diode current | IS | -1.4 | A | TC = 25 °C | 2 | ||
| Pulse diode forward current | ISM | -15 | A | 2 | |||
| Body diode voltage | VSD | -0.8 | -1.2 | V | IS = -2.2 A, VGS = 0 V | 2 | |
| Body diode reverse recovery time | trr | 15 | 30 | ns | IF = -2.2 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | |
| Body diode reverse recovery charge | Qrr | 9 | 18 | nC | 2 |
CAD (KiCad official)
- Symbol:
SI2319DDS-T1-GE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2319dds-t1-ge3-etched.step/si2319dds-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2319dds-t1-ge3.step/si2319dds-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
50f2a01bd9b241e5, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).