# SI2312M-6AF

**FOSAN** · MOSFETs · SOT-23

SI2312M-6AF from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±12 V, with threshold VGS(th) of 0.5 V min, 0.7 V typ and 1.2 V max at ID=250uA. |
| 2 | S | passive | Source; continuous drain current is 6.8 A at TA=25°C and body-diode forward drop is 1.2 V max at ISD=6.8A. |
| 3 | D | passive | Drain; drain-source voltage is rated 20 V, with continuous current of 6.8 A and pulsed current of 30 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | FOSAN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS |  |  | 12 | V |  | 1 |
| Drain Current (continuous) | ID |  |  | 6.8 | A | TA = 25°C | 1 |
| Drain Current (pulsed) | IDM |  |  | 30 | A |  | 1 |
| Total Device Dissipation | PD |  |  | 1250 | mW | TA = 25°C | 1 |
| Thermal Resistance Junction-Ambient | RΘJA |  |  | 100 | ℃/W |  | 1 |
| Junction/Storage Temperature | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | ID =250uA,VGS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | ID =250uA,VGS= VDS | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VGS=0V, VDS= 20V | 2 |
| Gate Body Leakage | IGSS |  |  | 100 | nA | VGS=+12V, VDS=0V | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 16 | 18 | mΩ | ID=6.8A,VGS=4.5V | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 22 | 33 | mΩ | ID=3A,VGS=2.5V | 2 |
| Diode Forward Voltage Drop | VSD |  |  | 1.2 | V | ISD=6.8A,VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `SI2312M-6AF`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2312m-6af-etched.step` / `si2312m-6af-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2312m-6af.step` / `si2312m-6af.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [FOSAN datasheet](docs/si2312m-6af-datasheet.pdf) (5 pp, sha256 `1f5ca10575487e3b`, retrieved 2026-10-21, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2312m-6af-datasheet.pdf)