component
SI2312M-6AF
Public Made by Adomby adom
FOSAN MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| si2312m-6af-etched.glb | 13d ago |
| si2312m-6af-etched.step | 13d ago |
| si2312m-6af-hero.glb | 13d ago |
| si2312m-6af-hero.overlay.json | 13d ago |
| si2312m-6af.glb | 13d ago |
| si2312m-6af.kicad_mod | 13d ago |
| si2312m-6af.kicad_sym | 13d ago |
| si2312m-6af.lbr | 13d ago |
| si2312m-6af.step | 13d ago |
SI2312M-6AF
FOSAN · MOSFETs · SOT-23
SI2312M-6AF from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±12 V, with threshold VGS(th) of 0.5 V min, 0.7 V typ and 1.2 V max at ID=250uA. |
| 2 | S | passive | Source; continuous drain current is 6.8 A at TA=25°C and body-diode forward drop is 1.2 V max at ISD=6.8A. |
| 3 | D | passive | Drain; drain-source voltage is rated 20 V, with continuous current of 6.8 A and pulsed current of 30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FOSAN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | 12 | V | 1 | |||
| Drain Current (continuous) | ID | 6.8 | A | TA = 25°C | 1 | ||
| Drain Current (pulsed) | IDM | 30 | A | 1 | |||
| Total Device Dissipation | PD | 1250 | mW | TA = 25°C | 1 | ||
| Thermal Resistance Junction-Ambient | RΘJA | 100 | ℃/W | 1 | |||
| Junction/Storage Temperature | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID =250uA,VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | ID =250uA,VGS= VDS | 2 |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VGS=0V, VDS= 20V | 2 | ||
| Gate Body Leakage | IGSS | 100 | nA | VGS=+12V, VDS=0V | 2 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 16 | 18 | mΩ | ID=6.8A,VGS=4.5V | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 22 | 33 | mΩ | ID=3A,VGS=2.5V | 2 | |
| Diode Forward Voltage Drop | VSD | 1.2 | V | ISD=6.8A,VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
SI2312M-6AF - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2312m-6af-etched.step/si2312m-6af-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2312m-6af.step/si2312m-6af.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FOSAN datasheet (5 pp, sha256
1f5ca10575487e3b, retrieved 2026-10-21, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).