# SI2312

**Guangdong Hottech** · MOSFETs · SOT-23

SI2312 from Guangdong Hottech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with gate-source voltage limited to ±8 V and threshold VGS(th) of 0.45 V min, 0.7 V typ, 1.0 V max at ID=250μA. |
| 2 | S | passive | Source; main current terminal, with continuous source-drain diode current up to 1.04 A. |
| 3 | D | passive | Drain; rated for VDS of 20 V and continuous drain current of 5 A (20 A pulsed). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source breakdown voltage | V(BR)DSS | 20 |  |  | V | VGS=0V, ID=250μA | 1 |
| Zero gate voltage drain current | IDSS |  |  | 1 | μA | VDS=20V, VGS=0V | 1 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±8V | 1 |
| Gate-threshold voltage (note 1) | VGS(th) | 0.45 | 0.7 | 1 | V | VDS=VGS, ID=250μA | 1 |
| Drain-source on-resistance (note 1), VGS=4.5V | RDS(ON) |  | 18 | 31.8 | mΩ | VGS=4.5V, ID=5A | 1 |
| Drain-source on-resistance (note 1), VGS=2.5V | RDS(ON) |  | 23 | 35.6 | mΩ | VGS=2.5V, ID=4.7A | 1 |
| Drain-source on-resistance (note 1), VGS=1.8V | RDS(ON) |  | 30 | 41.4 | mΩ | VGS=1.8V, ID=4.3A | 1 |
| Gate resistance | Rg |  | 0.5 | 4.8 | Ω | f=1MHz | 1 |
| Diode forward voltage (note 1) | VSD |  | 0.75 | 1.2 | V | IS=4A, VGS=0V | 1 |
| Drain-source voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-source voltage | VGS | -8 |  | 8 | V |  | 1 |
| Continuous drain current | ID |  |  | 5 | A |  | 1 |
| Pulsed drain current (Note 1) | IDM |  |  | 20 | A |  | 1 |
| Continuous Source-Drain Diode current | IS |  |  | 1.04 | A |  | 1 |
| Power dissipation | PD |  |  | 0.35 | W |  | 1 |
| Thermal resistance from Junction to ambient | RθJA |  |  | 357 | °C/W |  | 1 |
| Junction temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage temperature | TSTG | -55 |  | 150 | °C |  | 1 |
| Forward transconductance (note 1) | gFS |  | 6 |  | S | VDS=10V, ID=5A | 1 |
| Input capacitance | Ciss |  | 865 |  | pF |  | 1 |
| Output capacitance | Coss |  | 105 |  | pF | VDS=10V, VGS=0V, f=1MHz | 1 |
| Reverse transfer capacitance | Crss |  | 55 |  | pF |  | 1 |
| Turn-on delay time | td(on) |  | 10 |  | nS | VDD=30V, VGS=10V, RGEN=1Ω, ID=1.5A | 1 |
| Turn-on rise time | tr |  | 20 |  | nS | VDD=30V, VGS=10V, RGEN=1Ω, ID=1.5A | 1 |
| Turn-off delay time | td(off) |  | 32 |  | nS | VDD=30V, VGS=10V, RGEN=1Ω, ID=1.5A | 1 |
| Turn-off fall time | tf |  | 12 |  | nS | VDD=30V, VGS=10V, RGEN=1Ω, ID=1.5A | 1 |

## CAD (KiCad official)

- Symbol: `SI2312`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2312-etched.step` / `si2312-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2312.step` / `si2312.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Guangdong Hottech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603120182722514944) (4 pp, sha256 `57096f8724c7e398`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2312-datasheet.pdf)