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SI2312

Public Made by Adom

by adom

Guangdong Hottech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 21d ago
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package.json Publish 0.1.0 · Ray 21d ago
page.json si2312: specified limits as data (metadata.characteristics, 26 rows from the datasheet) · Ray 16d ago
README.md si2312: specified limits as data (metadata.characteristics, 26 rows from the datasheet) · Ray 16d ago
si2312-etched.glb si2312: factory component page (tier=lcsc) · Ray 21d ago
si2312-etched.step si2312: factory component page (tier=lcsc) · Ray 21d ago
si2312-hero.glb si2312: hero GLB from the etched model (keeps the MPN mark) · Ray 21d ago
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SI2312

Guangdong Hottech · MOSFETs · SOT-23

SI2312 from Guangdong Hottech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with gate-source voltage limited to ±8 V and threshold VGS(th) of 0.45 V min, 0.7 V typ, 1.0 V max at ID=250μA.
2 S passive Source; main current terminal, with continuous source-drain diode current up to 1.04 A.
3 D passive Drain; rated for VDS of 20 V and continuous drain current of 5 A (20 A pulsed).

Key specifications

Parameter Value
Manufacturer Guangdong Hottech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source breakdown voltage V(BR)DSS 20 V VGS=0V, ID=250μA 1
Zero gate voltage drain current IDSS 1 μA VDS=20V, VGS=0V 1
Gate-body leakage current IGSS -100 100 nA VDS=0V, VGS=±8V 1
Gate-threshold voltage (note 1) VGS(th) 0.45 0.7 1 V VDS=VGS, ID=250μA 1
Drain-source on-resistance (note 1), VGS=4.5V RDS(ON) 18 31.8 mΩ VGS=4.5V, ID=5A 1
Drain-source on-resistance (note 1), VGS=2.5V RDS(ON) 23 35.6 mΩ VGS=2.5V, ID=4.7A 1
Drain-source on-resistance (note 1), VGS=1.8V RDS(ON) 30 41.4 mΩ VGS=1.8V, ID=4.3A 1
Gate resistance Rg 0.5 4.8 Ω f=1MHz 1
Diode forward voltage (note 1) VSD 0.75 1.2 V IS=4A, VGS=0V 1
Drain-source voltage VDS 20 V 1
Gate-source voltage VGS -8 8 V 1
Continuous drain current ID 5 A 1
Pulsed drain current (Note 1) IDM 20 A 1
Continuous Source-Drain Diode current IS 1.04 A 1
Power dissipation PD 0.35 W 1
Thermal resistance from Junction to ambient RθJA 357 °C/W 1
Junction temperature TJ 150 °C 1
Storage temperature TSTG -55 150 °C 1
Forward transconductance (note 1) gFS 6 S VDS=10V, ID=5A 1
Input capacitance Ciss 865 pF 1
Output capacitance Coss 105 pF VDS=10V, VGS=0V, f=1MHz 1
Reverse transfer capacitance Crss 55 pF 1
Turn-on delay time td(on) 10 nS VDD=30V, VGS=10V, RGEN=1Ω, ID=1.5A 1
Turn-on rise time tr 20 nS VDD=30V, VGS=10V, RGEN=1Ω, ID=1.5A 1
Turn-off delay time td(off) 32 nS VDD=30V, VGS=10V, RGEN=1Ω, ID=1.5A 1
Turn-off fall time tf 12 nS VDD=30V, VGS=10V, RGEN=1Ω, ID=1.5A 1

CAD (KiCad official)

  • Symbol: SI2312
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2312-etched.step / si2312-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2312.step / si2312.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Guangdong Hottech datasheet (4 pp, sha256 57096f8724c7e398, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF