component
SI2310A
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UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si2310a: specified limits as data (metadata.characteristics, 18 rows from the datasheet)
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SI2310A
UMW · MOSFETs · SOT-23
SI2310A from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V in the absolute maximum ratings. |
| 2 | S | passive | SOURCE terminal of the N-channel MOSFET; the reference for VGS, and the datasheet gives no separate pin-level limit for it. |
| 3 | D | passive | DRAIN terminal of the N-channel MOSFET; drain-source voltage is rated at 60 V and continuous drain current at 3 A (TA = 25°C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 3 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 2.3 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | Pulse width ≤ 300us, duty cycle ≤ 2% | 1 | ||
| Power Dissipation | PD | 1.38 | W | TA=25°C | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | ID=250µA, VGS=0V | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 3 | V | VDS=VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 67 | 80 | mΩ | VGS=10V, ID=3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 77 | 95 | mΩ | VGS=4.5V, ID=2A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=1.2A, VGS=0V | 2 | ||
| Thermal Resistance Junction-to-ambient | RthJa | 90 | °C/W | 1 | |||
| Thermal Resistance Junction-to-ambient (Fig. 10 note) | Rthja | 270 | °C/W | Peak Tj = PDM x Rthja + Ta (Fig. 10 note) | 4 | ||
| Input Capacitance | Ciss | 490 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 55 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 40 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
SI2310A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2310a-etched.step/si2310a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2310a.step/si2310a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (7 pp, sha256
84bdced6245e8cb9, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI2310A
**UMW** · MOSFETs · SOT-23
SI2310A from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V in the absolute maximum ratings. |
| 2 | S | passive | SOURCE terminal of the N-channel MOSFET; the reference for VGS, and the datasheet gives no separate pin-level limit for it. |
| 3 | D | passive | DRAIN terminal of the N-channel MOSFET; drain-source voltage is rated at 60 V and continuous drain current at 3 A (TA = 25°C). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 3 | A | TA=25°C | 1 |
| Continuous Drain Current | ID | | | 2.3 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | 10 | A | Pulse width ≤ 300us, duty cycle ≤ 2% | 1 |
| Power Dissipation | PD | | | 1.38 | W | TA=25°C | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | ID=250µA, VGS=0V | 2 |
| Gate-Body leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 3 | V | VDS=VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 67 | 80 | mΩ | VGS=10V, ID=3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 77 | 95 | mΩ | VGS=4.5V, ID=2A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | IS=1.2A, VGS=0V | 2 |
| Thermal Resistance Junction-to-ambient | RthJa | | 90 | | °C/W | | 1 |
| Thermal Resistance Junction-to-ambient (Fig. 10 note) | Rthja | | 270 | | °C/W | Peak Tj = PDM x Rthja + Ta (Fig. 10 note) | 4 |
| Input Capacitance | Ciss | | 490 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Output Capacitance | Coss | | 55 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 40 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `SI2310A`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2310a-etched.step` / `si2310a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2310a.step` / `si2310a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755881171094261760) (7 pp, sha256 `84bdced6245e8cb9`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si2310a-datasheet.pdf)