component
SI2310A
Public Made by Adomby adom
UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 22d ago |
| viewers | 22d ago |
| package.json | 22d ago |
| page.json | 16d ago |
| README.md | 16d ago |
| si2310a-etched.glb | 22d ago |
| si2310a-etched.step | 22d ago |
| si2310a-hero.glb | 22d ago |
| si2310a-hero.overlay.json | 22d ago |
| si2310a.glb | 22d ago |
| si2310a.kicad_mod | 22d ago |
| si2310a.kicad_sym | 22d ago |
| si2310a.lbr | 22d ago |
| si2310a.step | 22d ago |
SI2310A
UMW · MOSFETs · SOT-23
SI2310A from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V in the absolute maximum ratings. |
| 2 | S | passive | SOURCE terminal of the N-channel MOSFET; the reference for VGS, and the datasheet gives no separate pin-level limit for it. |
| 3 | D | passive | DRAIN terminal of the N-channel MOSFET; drain-source voltage is rated at 60 V and continuous drain current at 3 A (TA = 25°C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 3 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 2.3 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | Pulse width ≤ 300us, duty cycle ≤ 2% | 1 | ||
| Power Dissipation | PD | 1.38 | W | TA=25°C | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | ID=250µA, VGS=0V | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 3 | V | VDS=VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 67 | 80 | mΩ | VGS=10V, ID=3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 77 | 95 | mΩ | VGS=4.5V, ID=2A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=1.2A, VGS=0V | 2 | ||
| Thermal Resistance Junction-to-ambient | RthJa | 90 | °C/W | 1 | |||
| Thermal Resistance Junction-to-ambient (Fig. 10 note) | Rthja | 270 | °C/W | Peak Tj = PDM x Rthja + Ta (Fig. 10 note) | 4 | ||
| Input Capacitance | Ciss | 490 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 55 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 40 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
SI2310A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2310a-etched.step/si2310a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2310a.step/si2310a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (7 pp, sha256
84bdced6245e8cb9, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).