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SI2309DS-T1-GE3-VB

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2309DS-T1-GE3-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

SI2309DS-T1-GE3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET; the gate-source voltage is rated ±20 V.
2 S passive Source terminal of the P-channel MOSFET; the source-drain body diode is rated at a continuous current of −5.2 A.
3 D passive Drain terminal of the P-channel MOSFET; the drain-source voltage is rated −60 V with a continuous drain current of −5.2 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -5.2 A TC = 25 °C, VGS at -10 V 1
Continuous Drain Current ID -3.8 A TC = 100 °C 1
Pulsed Drain Current IDM -21 A Repetitive rating; pulse width limited by max junction temperature 1
Linear Derating Factor 0.18 W/°C 1
Single Pulse Avalanche Energy EAS 120 mJ VDD = -25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 Ω, IAS = -5.3 A 1
Repetitive Avalanche Current IAR -5.2 A Repetitive rating; pulse width limited by max junction temperature 1
Repetitive Avalanche Energy EAR 2.7 mJ Repetitive rating; pulse width limited by max junction temperature 1
Maximum Power Dissipation PD 27 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt -4.5 V/ns ISD ≤ -6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Recommendations (Peak Temperature) for 10 s 300 for 10 s, 1.6 mm from case 1
Mounting Torque 10 lbf·in 6-32 or M3 screw 1
Mounting Torque 1.1 N·m 6-32 or M3 screw 1
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 100 µA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 500 µA VDS = -48 V, VGS = 0 V, TJ = 150 °C 2
Forward Transconductance gfs 1.6 S VDS = -25 V, ID = -3.2 A 2
Continuous Source-Drain Diode Current IS -5.2 A 2
Pulsed Diode Forward Current ISM -21 A Repetitive rating; pulse width limited by max junction temperature 2
Body Diode Voltage VSD -5.5 V TJ = 25 °C, IS = -5.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 80 160 ns TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs 2
Body Diode Reverse Recovery Charge Qrr 0.096 0.19 µC TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs 2
Maximum Junction-to-Ambient RthJA -65 °C/W 2
Maximum Junction-to-Case (Drain) RthJC -5.5 °C/W 2

CAD (KiCad official)

  • Symbol: SI2309DS-T1-GE3-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: si2309ds-t1-ge3-vb-etched.step / si2309ds-t1-ge3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2309ds-t1-ge3-vb.step / si2309ds-t1-ge3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (10 pp, sha256 ca04334c0fa7e27f, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF