component
SI2309DS-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSI2309DS-T1-GE3-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
SI2309DS-T1-GE3-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated ±20 V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the source-drain body diode is rated at a continuous current of −5.2 A. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage is rated −60 V with a continuous drain current of −5.2 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -5.2 | A | TC = 25 °C, VGS at -10 V | 1 | ||
| Continuous Drain Current | ID | -3.8 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -21 | A | Repetitive rating; pulse width limited by max junction temperature | 1 | ||
| Linear Derating Factor | 0.18 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 120 | mJ | VDD = -25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 Ω, IAS = -5.3 A | 1 | ||
| Repetitive Avalanche Current | IAR | -5.2 | A | Repetitive rating; pulse width limited by max junction temperature | 1 | ||
| Repetitive Avalanche Energy | EAR | 2.7 | mJ | Repetitive rating; pulse width limited by max junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 27 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | -4.5 | V/ns | ISD ≤ -6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) for 10 s | 300 | for 10 s, 1.6 mm from case | 1 | ||||
| Mounting Torque | 10 | lbf·in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N·m | 6-32 or M3 screw | 1 | |||
| Drain-Source Breakdown Voltage | VDS | -60 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 100 | µA | VDS = -60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 500 | µA | VDS = -48 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Forward Transconductance | gfs | 1.6 | S | VDS = -25 V, ID = -3.2 A | 2 | ||
| Continuous Source-Drain Diode Current | IS | -5.2 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | -21 | A | Repetitive rating; pulse width limited by max junction temperature | 2 | ||
| Body Diode Voltage | VSD | -5.5 | V | TJ = 25 °C, IS = -5.2 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 80 | 160 | ns | TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 0.096 | 0.19 | µC | TJ = 25 °C, IF = -4.7 A, dI/dt = 100 A/µs | 2 | |
| Maximum Junction-to-Ambient | RthJA | -65 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | -5.5 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
SI2309DS-T1-GE3-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
si2309ds-t1-ge3-vb-etched.step/si2309ds-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2309ds-t1-ge3-vb.step/si2309ds-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (10 pp, sha256
ca04334c0fa7e27f, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).