# SI2309CDS-T1-GE3-MS

**MSKSEMI** · MOSFETs · SOT-23

SI2309CDS-T1-GE3-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±20 V (VGS). |
| 2 | S | passive | Source terminal; the body diode continuous source current is rated -1.8 A (IS) and the pulsed source current -3.6 A (ISM). |
| 3 | D | passive | Drain terminal; drain-source voltage is rated -60 V (VDS) with continuous drain current -1.8 A at TA=25℃. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V, ID=-250uA | 3 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-60V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current | IDSS |  |  | -10 | uA | VDS=-48V, VGS=0V, TJ=125℃ | 3 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 200 | 300 | mΩ | VGS=-10V, ID=-1.8A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 300 | 400 | mΩ | VGS=-4.5V, ID=-1.5A | 3 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| Continuous Source Current | IS |  |  | -1.8 | A | VG=VD=0V, Force Current | 3 |
| Pulsed Source Current | ISM |  |  | -3.6 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
| Drain-Source Voltage | VDS |  |  | -60 | V | Tc=25℃ unless otherwise noted | 2 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | Tc=25℃ unless otherwise noted | 2 |
| Drain Current, Continuous | ID |  |  | -1.8 | A | TA=25℃ | 2 |
| Drain Current, Continuous | ID |  |  | -1.5 | A | TA=70℃ | 2 |
| Drain Current, Pulsed | IDM |  |  | -8 | A |  | 2 |
| Power Dissipation | PD |  |  | 1.56 | W | TA=25℃ | 2 |
| Power Dissipation, Derate above 25℃ | PD |  | 0.012 |  | W/℃ | Derate above 25℃ | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 2 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 2 |
| Thermal Resistance Junction to Ambient | RθJA |  |  | 80 | ℃/W |  | 2 |

## CAD (KiCad official)

- Symbol: `SI2309CDS-T1-GE3-MS`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2309cds-t1-ge3-ms-etched.step` / `si2309cds-t1-ge3-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2309cds-t1-ge3-ms.step` / `si2309cds-t1-ge3-ms.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589839719090446336) (6 pp, sha256 `8f05532a52525e88`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2309cds-t1-ge3-ms-datasheet.pdf)