component
SI2309CDS-T1-GE3-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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|---|---|
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| si2309cds-t1-ge3-ms-etched.glb | 17d ago |
| si2309cds-t1-ge3-ms-etched.step | 17d ago |
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| si2309cds-t1-ge3-ms-hero.overlay.json | 17d ago |
| si2309cds-t1-ge3-ms.glb | 17d ago |
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SI2309CDS-T1-GE3-MS
MSKSEMI · MOSFETs · SOT-23
SI2309CDS-T1-GE3-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±20 V (VGS). |
| 2 | S | passive | Source terminal; the body diode continuous source current is rated -1.8 A (IS) and the pulsed source current -3.6 A (ISM). |
| 3 | D | passive | Drain terminal; drain-source voltage is rated -60 V (VDS) with continuous drain current -1.8 A at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 3 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-60V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current | IDSS | -10 | uA | VDS=-48V, VGS=0V, TJ=125℃ | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 200 | 300 | mΩ | VGS=-10V, ID=-1.8A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 300 | 400 | mΩ | VGS=-4.5V, ID=-1.5A | 3 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| Continuous Source Current | IS | -1.8 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current | ISM | -3.6 | A | 3 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 | ||
| Drain-Source Voltage | VDS | -60 | V | Tc=25℃ unless otherwise noted | 2 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Tc=25℃ unless otherwise noted | 2 | |
| Drain Current, Continuous | ID | -1.8 | A | TA=25℃ | 2 | ||
| Drain Current, Continuous | ID | -1.5 | A | TA=70℃ | 2 | ||
| Drain Current, Pulsed | IDM | -8 | A | 2 | |||
| Power Dissipation | PD | 1.56 | W | TA=25℃ | 2 | ||
| Power Dissipation, Derate above 25℃ | PD | 0.012 | W/℃ | Derate above 25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction to Ambient | RθJA | 80 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
SI2309CDS-T1-GE3-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2309cds-t1-ge3-ms-etched.step/si2309cds-t1-ge3-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2309cds-t1-ge3-ms.step/si2309cds-t1-ge3-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (6 pp, sha256
8f05532a52525e88, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).