# SI2305

**Guangdong Hottech** · MOSFETs · SOT-23

SI2305 from Guangdong Hottech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET, rated for a gate-source voltage VGS of 8 V (absolute maximum, ±8 V in the leakage test) with a gate-source threshold of -0.5 V to -0.9 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, with a continuous source-drain diode current IS of -1.4 A at TC=25°C and a pulsed diode forward current ISM of -10 A. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -12 V, a continuous drain current ID of -4.1 A and a pulsed drain current IDM of -10 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -12 |  |  | V |  | 1 |
| Gate-source voltage | VGS |  |  | 8 | V |  | 1 |
| Drain current (continuous) | ID | -4.1 |  |  | A |  | 1 |
| Drain current (pulsed) | IDM | -10 |  |  | A |  | 1 |
| Total power dissipation | PD |  |  | 0.35 | W | TA=25 C | 1 |
| Operating junction and storage temperature range | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance junction to ambient | RθJA |  |  | 357 | °C/W | PCB mounted | 1 |
| Drain-source breakdown voltage | V(BR)DSS | -12 |  |  | V | VGS = 0V, ID = -250µA | 1 |
| Gate-source threshold voltage | VGS(th) | -0.5 |  | -0.9 | V | VDS = VGS, ID = -250µA | 1 |
| Gate-source leakage | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±8V | 1 |
| Zero gate voltage drain current | IDSS |  |  | -1 | µA | VDS = -8V, VGS = 0V | 1 |
| Drain-source on-state resistance | RDS(on) |  | 30 | 45 | mΩ | VGS = -4.5V, ID = -3.5A | 1 |
| Drain-source on-state resistance | RDS(on) |  | 40 | 60 | mΩ | VGS = -2.5V, ID = -3A | 1 |
| Drain-source on-state resistance | RDS(on) |  | 60 | 90 | mΩ | VGS = -1.8V, ID = -2.0A | 1 |
| Forward transconductance | gfs |  | 6 |  | S | VDS = -5V, ID = -4.1A | 1 |
| Input capacitance | Ciss |  | 740 |  | pF | VDS = -4V, VGS = 0V, f = 1MHz | 1 |
| Output capacitance | Coss |  | 290 |  | pF | VDS = -4V, VGS = 0V, f = 1MHz | 1 |
| Reverse transfer capacitance | Crss |  | 190 |  | pF | VDS = -4V, VGS = 0V, f = 1MHz | 1 |
| Total gate charge | Qg |  | 7.8 | 15 | nC | VDS = -4V, VGS = -4.5V, ID = -4.1A | 1 |
| Total gate charge | Qg |  | 4.5 | 9 | nC | VDS = -4V, VGS = -2.5V, ID = -4.1A | 1 |
| Gate-source charge | Qgs |  | 1.2 |  | nC |  | 1 |
| Gate-drain charge | Qgd |  | 1.6 |  | nC |  | 1 |
| Gate resistance | Rg | 1.4 | 7 | 14 | Ω | f = 1MHz | 1 |
| Turn-on delay time | td(on) |  | 13 | 20 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-4.5V, Rg=1Ω | 2 |
| Rise time | tr |  | 35 | 53 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-4.5V, Rg=1Ω | 2 |
| Turn-off delay time | td(off) |  | 32 | 48 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-4.5V, Rg=1Ω | 2 |
| Fall time | tf |  | 10 | 20 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-4.5V, Rg=1Ω | 2 |
| Turn-on delay time | td(on) |  | 5 | 10 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-8V, Rg=1Ω | 2 |
| Rise time | tr |  | 11 | 17 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-8V, Rg=1Ω | 2 |
| Turn-off delay time | td(off) |  | 22 | 33 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-8V, Rg=1Ω | 2 |
| Fall time | tf |  | 16 | 24 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-8V, Rg=1Ω | 2 |
| Continuous source-drain diode current | IS |  |  | -1.4 | A | TC=25℃ | 2 |
| Pulse diode forward current | ISM |  |  | -10 | A |  | 2 |
| Body diode voltage | VSD |  |  | -1.2 | V | IF = -3.3A | 2 |

## CAD (KiCad official)

- Symbol: `SI2305`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2305-etched.step` / `si2305-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2305.step` / `si2305.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Guangdong Hottech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586189681994174464) (3 pp, sha256 `7ae5f2f0239b51b1`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2305-datasheet.pdf)