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SI2305
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Guangdong Hottech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2305
Guangdong Hottech · MOSFETs · SOT-23
SI2305 from Guangdong Hottech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET, rated for a gate-source voltage VGS of 8 V (absolute maximum, ±8 V in the leakage test) with a gate-source threshold of -0.5 V to -0.9 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, with a continuous source-drain diode current IS of -1.4 A at TC=25°C and a pulsed diode forward current ISM of -10 A. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -12 V, a continuous drain current ID of -4.1 A and a pulsed drain current IDM of -10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -12 | V | 1 | |||
| Gate-source voltage | VGS | 8 | V | 1 | |||
| Drain current (continuous) | ID | -4.1 | A | 1 | |||
| Drain current (pulsed) | IDM | -10 | A | 1 | |||
| Total power dissipation | PD | 0.35 | W | TA=25 C | 1 | ||
| Operating junction and storage temperature range | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance junction to ambient | RθJA | 357 | °C/W | PCB mounted | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | -12 | V | VGS = 0V, ID = -250µA | 1 | ||
| Gate-source threshold voltage | VGS(th) | -0.5 | -0.9 | V | VDS = VGS, ID = -250µA | 1 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±8V | 1 | |
| Zero gate voltage drain current | IDSS | -1 | µA | VDS = -8V, VGS = 0V | 1 | ||
| Drain-source on-state resistance | RDS(on) | 30 | 45 | mΩ | VGS = -4.5V, ID = -3.5A | 1 | |
| Drain-source on-state resistance | RDS(on) | 40 | 60 | mΩ | VGS = -2.5V, ID = -3A | 1 | |
| Drain-source on-state resistance | RDS(on) | 60 | 90 | mΩ | VGS = -1.8V, ID = -2.0A | 1 | |
| Forward transconductance | gfs | 6 | S | VDS = -5V, ID = -4.1A | 1 | ||
| Input capacitance | Ciss | 740 | pF | VDS = -4V, VGS = 0V, f = 1MHz | 1 | ||
| Output capacitance | Coss | 290 | pF | VDS = -4V, VGS = 0V, f = 1MHz | 1 | ||
| Reverse transfer capacitance | Crss | 190 | pF | VDS = -4V, VGS = 0V, f = 1MHz | 1 | ||
| Total gate charge | Qg | 7.8 | 15 | nC | VDS = -4V, VGS = -4.5V, ID = -4.1A | 1 | |
| Total gate charge | Qg | 4.5 | 9 | nC | VDS = -4V, VGS = -2.5V, ID = -4.1A | 1 | |
| Gate-source charge | Qgs | 1.2 | nC | 1 | |||
| Gate-drain charge | Qgd | 1.6 | nC | 1 | |||
| Gate resistance | Rg | 1.4 | 7 | 14 | Ω | f = 1MHz | 1 |
| Turn-on delay time | td(on) | 13 | 20 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-4.5V, Rg=1Ω | 2 | |
| Rise time | tr | 35 | 53 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-4.5V, Rg=1Ω | 2 | |
| Turn-off delay time | td(off) | 32 | 48 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-4.5V, Rg=1Ω | 2 | |
| Fall time | tf | 10 | 20 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-4.5V, Rg=1Ω | 2 | |
| Turn-on delay time | td(on) | 5 | 10 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-8V, Rg=1Ω | 2 | |
| Rise time | tr | 11 | 17 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-8V, Rg=1Ω | 2 | |
| Turn-off delay time | td(off) | 22 | 33 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-8V, Rg=1Ω | 2 | |
| Fall time | tf | 16 | 24 | ns | VDD=-4V, RL=1.2Ω, ID≈-3.3A, VGEN=-8V, Rg=1Ω | 2 | |
| Continuous source-drain diode current | IS | -1.4 | A | TC=25℃ | 2 | ||
| Pulse diode forward current | ISM | -10 | A | 2 | |||
| Body diode voltage | VSD | -1.2 | V | IF = -3.3A | 2 |
CAD (KiCad official)
- Symbol:
SI2305 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2305-etched.step/si2305-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2305.step/si2305.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Guangdong Hottech datasheet (3 pp, sha256
7ae5f2f0239b51b1, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).