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SI2302M-6AF

Public Made by Adom

by adom

FOSAN MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2302M-6AF

FOSAN · MOSFETs · SOT-23

SI2302M-6AF from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±10 V absolute maximum, with threshold VGS(th) of 0.45 V min to 1.1 V max at ID=250 uA.
2 S passive Source; connects to the body diode anode, with diode forward drop of 1.2 V max at ISD=4 A and continuous drain current of 4.3 A at TA=25°C.
3 D passive Drain; drain-source voltage rated 20 V, continuous drain current 4.3 A and pulsed 12 A.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V ID =250uA, VGS=0V 2
Gate Threshold Voltage VGS(th) 0.45 0.7 1.1 V ID =250uA, VGS= VDS 2
Zero Gate Voltage Drain Current IDSS 1 uA VGS=0V, VDS= 20V 2
Gate Body Leakage IGSS 100 nA VGS=+10V, VDS=0V 2
Static Drain-Source On-State Resistance RDS(ON) 22 30 mΩ ID=4.3A, VGS=4.5V 2
Static Drain-Source On-State Resistance RDS(ON) 30 45 mΩ ID=3A, VGS=2.5V 2
Diode Forward Voltage Drop VSD 1.2 V ISD=4A, VGS=0V 2
Drain-Source Voltage BVDSS 20 V 1
Gate- Source Voltage VGS 10 V 1
Drain Current (continuous) ID 4.3 A at TA = 25°C 1
Drain Current (pulsed) IDM 12 A 1
Total Device Dissipation PD 1200 mW at TA = 25°C 1
Junction/Storage Temperature TJ,Tstg -55 150 ℃ 1
Thermal Resistance Junction-Ambient RΘJA 104 ℃/W 1

CAD (KiCad official)

  • Symbol: SI2302M-6AF
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2302m-6af-etched.step / si2302m-6af-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2302m-6af.step / si2302m-6af.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (5 pp, sha256 44df439fe3aff588, retrieved 2026-10-21, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF