component
SI2302M-6AF
Public Made by Adomby adom
FOSAN MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2302M-6AF
FOSAN · MOSFETs · SOT-23
SI2302M-6AF from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±10 V absolute maximum, with threshold VGS(th) of 0.45 V min to 1.1 V max at ID=250 uA. |
| 2 | S | passive | Source; connects to the body diode anode, with diode forward drop of 1.2 V max at ISD=4 A and continuous drain current of 4.3 A at TA=25°C. |
| 3 | D | passive | Drain; drain-source voltage rated 20 V, continuous drain current 4.3 A and pulsed 12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FOSAN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID =250uA, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.7 | 1.1 | V | ID =250uA, VGS= VDS | 2 |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VGS=0V, VDS= 20V | 2 | ||
| Gate Body Leakage | IGSS | 100 | nA | VGS=+10V, VDS=0V | 2 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 22 | 30 | mΩ | ID=4.3A, VGS=4.5V | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 30 | 45 | mΩ | ID=3A, VGS=2.5V | 2 | |
| Diode Forward Voltage Drop | VSD | 1.2 | V | ISD=4A, VGS=0V | 2 | ||
| Drain-Source Voltage | BVDSS | 20 | V | 1 | |||
| Gate- Source Voltage | VGS | 10 | V | 1 | |||
| Drain Current (continuous) | ID | 4.3 | A | at TA = 25°C | 1 | ||
| Drain Current (pulsed) | IDM | 12 | A | 1 | |||
| Total Device Dissipation | PD | 1200 | mW | at TA = 25°C | 1 | ||
| Junction/Storage Temperature | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RΘJA | 104 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SI2302M-6AF - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2302m-6af-etched.step/si2302m-6af-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2302m-6af.step/si2302m-6af.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FOSAN datasheet (5 pp, sha256
44df439fe3aff588, retrieved 2026-10-21, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).