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Si2302CDS-T1-GE3
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Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -38,19 +38,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate terminal; VGS(th) = 0.40 V (min) to 0.85 V (max) at VDS = VGS, ID = 250 \u00b5A; absolute maximum VGS = \u00b18 V; gate-body leakage IGSS = \u00b1100 nA max at VGS = \u00b18 V."+ "description": "Gate terminal; VGS(th) = 0.40 V (min) to 0.85 V (max) at VDS = VGS, ID = 250 µA; absolute maximum VGS = ±8 V; gate-body leakage IGSS = ±100 nA max at VGS = ±8 V." }, { "number": "2", "name": "S", "type": "passive",- "description": "Source terminal; body diode anode; maximum continuous source current (diode conduction) IS = 0.72 A (5 s) / 0.6 A steady state at TA = 25 \u00b0C; body diode forward voltage VSD = 0.7 V typ / 1.2 V max at IS = 0.95 A."+ "description": "Source terminal; body diode anode; maximum continuous source current (diode conduction) IS = 0.72 A (5 s) / 0.6 A steady state at TA = 25 °C; body diode forward voltage VSD = 0.7 V typ / 1.2 V max at IS = 0.95 A." }, { "number": "3", "name": "D", "type": "passive",- "description": "Drain terminal; VDS(max) = 20 V; continuous drain current ID = 2.9 A (5 s) / 2.6 A steady state at TA = 25 \u00b0C; RDS(on) = 0.057 \u03a9 max at VGS = 4.5 V, ID = 3.6 A."+ "description": "Drain terminal; VDS(max) = 20 V; continuous drain current ID = 2.9 A (5 s) / 2.6 A steady state at TA = 25 °C; RDS(on) = 0.057 Ω max at VGS = 4.5 V, ID = 3.6 A." } ], "provenance": {@@ -128,5 +128,8 @@ "docs/si2302cds-t1-ge3-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }