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Contents

README

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Si2302CDS-T1-GE3

Vishay Intertech · MOSFETs · SOT-23

Si2302CDS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; VGS(th) = 0.40 V (min) to 0.85 V (max) at VDS = VGS, ID = 250 µA; absolute maximum VGS = ±8 V; gate-body leakage IGSS = ±100 nA max at VGS = ±8 V.
2 S passive Source terminal; body diode anode; maximum continuous source current (diode conduction) IS = 0.72 A (5 s) / 0.6 A steady state at TA = 25 °C; body diode forward voltage VSD = 0.7 V typ / 1.2 V max at IS = 0.95 A.
3 D passive Drain terminal; VDS(max) = 20 V; continuous drain current ID = 2.9 A (5 s) / 2.6 A steady state at TA = 25 °C; RDS(on) = 0.057 Ω max at VGS = 4.5 V, ID = 3.6 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: Si2302CDS-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2302cds-t1-ge3-etched.step / si2302cds-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2302cds-t1-ge3.step / si2302cds-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (5 pp, sha256 9725799abadf1dba, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF