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SI2302ADS-T1-JSM

Public Made by Adom

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JSMSEMI MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI2302ADS-T1-JSM

JSMSEMI · MOSFETs · SOT-23-3

SI2302ADS-T1-JSM from JSMSEMI, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the top view shows it on the left, upper side, with a maximum gate-source voltage of ±10 V.
2 S passive Source; the top view shows it on the left, lower side, with a continuous source (diode) current of 1.5 A.
3 D passive Drain; the top view shows it alone on the right side, with a drain-source voltage of 20 V and continuous drain current of 4.5 A.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS=0V, ID=250uA 2
Gate Threshold Voltage VGS(th) 0.5 1 V VDS=VGS, ID=250uA 2
Gate Leakage Current IGSS -100 100 nA VDS=0V, VGS=±12V 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=20V, VGS=0 2
Zero Gate Voltage Drain Current (TJ=55℃) IDSS 5 uA VDS=20V, VGS=0, TJ=55℃ 2
Drain-Source On-Resistance RDS(ON) 25 45 mΩ VGS=4.5V, ID=3.0A 2
Drain-Source On-Resistance RDS(ON) 40 60 mΩ VGS=2.5V, ID=2.5A 2
Drain-Source On-Resistance RDS(ON) 65 90 mΩ VGS=1.8V, ID=2.0A 2
Diode Forward Voltage VSD 0.78 1.2 V IS=1.7A, VGS=0V 2
Total Gate Charge Qg 11 13 nC VDS=10V, VGS=4.5V, ID=5.0A 2
Turn-On Delay Time Td(on) 14.5 25 nS VDS=10V, ID=1.0A, VGEN=4.5V, RG=6Ω 2
Rise Time Tr 42 62 nS VDS=10V, ID=1.0A, VGEN=4.5V, RG=6Ω 2
Turn-Off Delay Time Td(off) 46 67 nS VDS=10V, ID=1.0A, VGEN=4.5V, RG=6Ω 2
Fall Time Tf 34 43 nS VDS=10V, ID=1.0A, VGEN=4.5V, RG=6Ω 2
Drain-Source Voltage VDSS 20 V 1
Gate-Source Voltage VGSS -10 10 V 1
Continuous Drain Current ID 4.5 A TC=25℃, VGS=10V 1
Continuous Drain Current ID 3 A TC=70℃ 1
Pulsed Drain Current IDM 20 A 1
Continuous Source Current (Diode Conduction) IS 1.5 A 1
Power Dissipation PD 1.5 W TA=25℃ 1
Power Dissipation PD 0.9 W TA=70℃ 1
Operation Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Thermal Resistance Junction to Ambient RθJA 90 ℃/W 1

CAD (KiCad official)

  • Symbol: SI2302ADS-T1-JSM
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: si2302ads-t1-jsm-etched.step / si2302ads-t1-jsm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2302ads-t1-jsm.step / si2302ads-t1-jsm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (5 pp, sha256 62ba0bb66368eab3, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF