component
SI2302ADS-T1-JSM
Public Made by Adomby adom
JSMSEMI MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2302ADS-T1-JSM
JSMSEMI · MOSFETs · SOT-23-3
SI2302ADS-T1-JSM from JSMSEMI, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the top view shows it on the left, upper side, with a maximum gate-source voltage of ±10 V. |
| 2 | S | passive | Source; the top view shows it on the left, lower side, with a continuous source (diode) current of 1.5 A. |
| 3 | D | passive | Drain; the top view shows it alone on the right side, with a drain-source voltage of 20 V and continuous drain current of 4.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | 1 | V | VDS=VGS, ID=250uA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=20V, VGS=0 | 2 | ||
| Zero Gate Voltage Drain Current (TJ=55℃) | IDSS | 5 | uA | VDS=20V, VGS=0, TJ=55℃ | 2 | ||
| Drain-Source On-Resistance | RDS(ON) | 25 | 45 | mΩ | VGS=4.5V, ID=3.0A | 2 | |
| Drain-Source On-Resistance | RDS(ON) | 40 | 60 | mΩ | VGS=2.5V, ID=2.5A | 2 | |
| Drain-Source On-Resistance | RDS(ON) | 65 | 90 | mΩ | VGS=1.8V, ID=2.0A | 2 | |
| Diode Forward Voltage | VSD | 0.78 | 1.2 | V | IS=1.7A, VGS=0V | 2 | |
| Total Gate Charge | Qg | 11 | 13 | nC | VDS=10V, VGS=4.5V, ID=5.0A | 2 | |
| Turn-On Delay Time | Td(on) | 14.5 | 25 | nS | VDS=10V, ID=1.0A, VGEN=4.5V, RG=6Ω | 2 | |
| Rise Time | Tr | 42 | 62 | nS | VDS=10V, ID=1.0A, VGEN=4.5V, RG=6Ω | 2 | |
| Turn-Off Delay Time | Td(off) | 46 | 67 | nS | VDS=10V, ID=1.0A, VGEN=4.5V, RG=6Ω | 2 | |
| Fall Time | Tf | 34 | 43 | nS | VDS=10V, ID=1.0A, VGEN=4.5V, RG=6Ω | 2 | |
| Drain-Source Voltage | VDSS | 20 | V | 1 | |||
| Gate-Source Voltage | VGSS | -10 | 10 | V | 1 | ||
| Continuous Drain Current | ID | 4.5 | A | TC=25℃, VGS=10V | 1 | ||
| Continuous Drain Current | ID | 3 | A | TC=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 1.5 | A | 1 | |||
| Power Dissipation | PD | 1.5 | W | TA=25℃ | 1 | ||
| Power Dissipation | PD | 0.9 | W | TA=70℃ | 1 | ||
| Operation Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 90 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SI2302ADS-T1-JSM - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
si2302ads-t1-jsm-etched.step/si2302ads-t1-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2302ads-t1-jsm.step/si2302ads-t1-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (5 pp, sha256
62ba0bb66368eab3, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).