# SI2301W

**TWGMC** · MOSFETs · SOT-323

SI2301W from TWGMC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel TrenchFET; the gate-source voltage VGS is rated ±8 V. |
| 2 | Source | passive | Source terminal of the MOSFET; the device is rated for a drain-source voltage VDS of -20 V. |
| 3 | Drain | passive | Drain terminal of the MOSFET; the continuous drain current ID is rated -2.1 A and the pulsed drain current IDM is rated -4.8 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TWGMC |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -8 |  | 8 | V |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Drain-Source Voltage | VDS |  |  | -20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -2.1 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | -4.8 | A |  | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | -0.72 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 0.35 | W |  | 1 |
| Junction Temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Thermal Resistance from Junction to Ambient | R JA |  |  | 357 | ℃/W | t ≤ 5s | 1 |
| Drain-source breakdown voltage | V(BR)DSS | -20 |  |  | V | VGS = 0V, ID =-250µA | 2 |
| Gate-source threshold voltage | VGS(th) | -0.4 |  | -1 | V | VDS =VGS, ID =-250µA | 2 |
| Gate-source leakage | IGSS | -100 |  | 100 | nA | VDS =0V, VGS =±8V | 2 |
| Zero gate voltage drain current | IDSS |  |  | -1 | µA | VDS =-20V, VGS =0V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 0.09 | 0.12 | Ω | VGS =-4.5V, ID =-1A | 2 |
| Drain-source on-state resistance | RDS(on) |  | 0.11 | 0.17 | Ω | VGS =-2.5V, ID =-0.5A | 2 |
| Total gate charge | Qg |  | 5.5 | 10 | nC | VDS =-10V,VGS =-4.5V,ID =-3A | 2 |
| Total gate charge | Qg |  | 3.3 | 6 | nC | VDS =-10V,VGS =-2.5V,ID =-3A | 2 |
| Turn-on delay time | td(on) |  | 11 | 20 | ns | VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V, Rg=1Ω | 2 |
| Rise time | tr |  | 35 | 60 | ns | VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V, Rg=1Ω | 2 |
| Turn-off delay time | td(off) |  | 30 | 50 | ns | VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V, Rg=1Ω | 2 |
| Fall time | tf |  | 10 | 20 | ns | VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V, Rg=1Ω | 2 |
| Body diode voltage | VSD |  | -0.8 | -1.2 | V | IS=-0.7A | 2 |

## CAD (KiCad official)

- Symbol: `SI2301W`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `si2301w-etched.step` / `si2301w-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2301w.step` / `si2301w.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TWGMC datasheet](docs/si2301w-datasheet.pdf) (4 pp, sha256 `fc1a1f860960d851`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2301w-datasheet.pdf)