component
SI2301W
Public Made by Adomby adom
TWGMC MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2301W
TWGMC · MOSFETs · SOT-323
SI2301W from TWGMC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel TrenchFET; the gate-source voltage VGS is rated ±8 V. |
| 2 | Source | passive | Source terminal of the MOSFET; the device is rated for a drain-source voltage VDS of -20 V. |
| 3 | Drain | passive | Drain terminal of the MOSFET; the continuous drain current ID is rated -2.1 A and the pulsed drain current IDM is rated -4.8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TWGMC |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Continuous Drain Current | ID | -2.1 | A | 1 | |||
| Pulsed Drain Current | IDM | -4.8 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -0.72 | A | 1 | |||
| Maximum Power Dissipation | PD | 0.35 | W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Thermal Resistance from Junction to Ambient | R JA | 357 | ℃/W | t ≤ 5s | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | VGS = 0V, ID =-250µA | 2 | ||
| Gate-source threshold voltage | VGS(th) | -0.4 | -1 | V | VDS =VGS, ID =-250µA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS =0V, VGS =±8V | 2 | |
| Zero gate voltage drain current | IDSS | -1 | µA | VDS =-20V, VGS =0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.09 | 0.12 | Ω | VGS =-4.5V, ID =-1A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.11 | 0.17 | Ω | VGS =-2.5V, ID =-0.5A | 2 | |
| Total gate charge | Qg | 5.5 | 10 | nC | VDS =-10V,VGS =-4.5V,ID =-3A | 2 | |
| Total gate charge | Qg | 3.3 | 6 | nC | VDS =-10V,VGS =-2.5V,ID =-3A | 2 | |
| Turn-on delay time | td(on) | 11 | 20 | ns | VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V, Rg=1Ω | 2 | |
| Rise time | tr | 35 | 60 | ns | VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V, Rg=1Ω | 2 | |
| Turn-off delay time | td(off) | 30 | 50 | ns | VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V, Rg=1Ω | 2 | |
| Fall time | tf | 10 | 20 | ns | VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V, Rg=1Ω | 2 | |
| Body diode voltage | VSD | -0.8 | -1.2 | V | IS=-0.7A | 2 |
CAD (KiCad official)
- Symbol:
SI2301W - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
si2301w-etched.step/si2301w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2301w.step/si2301w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TWGMC datasheet (4 pp, sha256
fc1a1f860960d851, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).