SI2301CDS-T1-GE3-ES

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  "title": "SI2301CDS-T1-GE3-ES",
  "brief": "ElecSuper MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "package": "SOT-23",
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    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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        "name": "Gate",
        "type": "input",
        "description": "Gate terminal of the P-channel MOSFET; the datasheet gives a Gate-Source Voltage limit of ±12 V."
      },
      {
        "number": "2",
        "name": "Source",
        "type": "passive",
        "description": "Source terminal of the P-channel MOSFET; the datasheet gives a Drain-Source Voltage (BVDSS) of -20 V."
      },
      {
        "number": "3",
        "name": "Drain",
        "type": "passive",
        "description": "Drain terminal of the P-channel MOSFET; the datasheet gives a continuous drain current of -2.0 A at TA=25°C and a pulsed drain current of -8.1 A."
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      "Manufacturer": "ElecSuper",
      "Package": "SOT-23",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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          "name": "Gate-to-source Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
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          "typ": null,
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          "name": "Maximum Power Dissipation",
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