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SI2301CDS-T1-GE3-ES
Public Made by Adomby adom
ElecSuper MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2301CDS-T1-GE3-ES
ElecSuper · MOSFETs · SOT-23
SI2301CDS-T1-GE3-ES from ElecSuper, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; the datasheet gives a Gate-Source Voltage limit of ±12 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the datasheet gives a Drain-Source Voltage (BVDSS) of -20 V. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; the datasheet gives a continuous drain current of -2.0 A at TA=25°C and a pulsed drain current of -8.1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-to-source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 3 | |
| Gate Threshold Voltage | VGS(TH) | -0.4 | -0.62 | -1 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 82 | 115 | mΩ | VGS=-4.5V, ID=-2A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 118 | 160 | mΩ | VGS=-2.5V, ID=-1.5A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 180 | 245 | mΩ | VGS=-1.8V, ID=-1A | 3 | |
| Drain-Source Voltage | BVDSS | -20 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Continuous Drain Current | ID | -2 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | -1.2 | A | TA=100°C | 2 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA=25°C | 2 | ||
| Pulsed Drain Current | IDM | -8.1 | A | 2 | |||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
SI2301CDS-T1-GE3-ES - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2301cds-t1-ge3-es-etched.step/si2301cds-t1-ge3-es-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2301cds-t1-ge3-es.step/si2301cds-t1-ge3-es.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (7 pp, sha256
b8fc403408536d63, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).