# SI2301AHE3-TP

**MCC Micro Commercial Components** · MOSFETs · SOT-23

SI2301AHE3-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate of the P-channel MOSFET, with VGS(th) of -0.4 V to -1.0 V at VDS=VGS and ID=-250µA and gate-body leakage of ±100 nA at VGS=±10 V. |
| 2 | SOURCE | passive | Source of the P-channel MOSFET; the body diode forward voltage VSD is given as -1.2 V at VGS=0V and IS=-0.75A. |
| 3 | DRAIN | passive | Drain of the P-channel MOSFET; drain-source breakdown V(BR)DSS is -20 V at VGS=0V and ID=-250µA, with zero-gate drain current of -1 µA at VDS=-20V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MCC Micro Commercial Components |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -10 |  | 10 | V |  | 1 |
| Drain Current-Continuous | ID | -3.4 |  |  | A | TA=25°C | 1 |
| Drain Current-Continuous | ID | -2.7 |  |  | A | TA=70°C | 1 |
| Drain Current-Pulse | IDM | -14 |  |  | A | Note 2 | 1 |
| Power Dissipation | PD |  |  | 1 | W |  | 1 |
| Operating Junction Temperature Range |  | -55 |  | 150 | °C |  | 1 |
| Storage Temperature Range |  | -55 |  | 150 | °C |  | 1 |
| Maximum Thermal Resistance Junction to Ambient |  |  |  | 125 | °C/W | Note 2: Surface Mounted on FR4 Board t<5sec | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 |  |  | V | VGS=0V, ID=-250µA | 2 |
| Gate-Threshold Voltage | VGS(th) | -0.4 | -0.62 | -1 | V | VDS=VGS, ID=-250µA | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS =± 10V, VDS =0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS =-20V, VGS =0V | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 42 | 51 | mΩ | VGS=-4.5V, ID=-3.4A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 55 | 67 | mΩ | VGS=-2.5V, ID=-3.0A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 76 | 91 | mΩ | VGS=-1.8V, ID=-2.5A | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-0.75A | 2 |

## CAD (KiCad official)

- Symbol: `SI2301AHE3-TP`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `si2301ahe3-tp-etched.step` / `si2301ahe3-tp-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2301ahe3-tp.step` / `si2301ahe3-tp.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MCC Micro Commercial Components datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603625660741545984) (4 pp, sha256 `e1a4174e6cce1f88`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2301ahe3-tp-datasheet.pdf)