component
SI2301AHE3-TP
Public Made by Adomby adom
MCC Micro Commercial Components MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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|---|---|
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| README.md | 17d ago |
| si2301ahe3-tp-etched.glb | 17d ago |
| si2301ahe3-tp-etched.step | 17d ago |
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SI2301AHE3-TP
MCC Micro Commercial Components · MOSFETs · SOT-23
SI2301AHE3-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate of the P-channel MOSFET, with VGS(th) of -0.4 V to -1.0 V at VDS=VGS and ID=-250µA and gate-body leakage of ±100 nA at VGS=±10 V. |
| 2 | SOURCE | passive | Source of the P-channel MOSFET; the body diode forward voltage VSD is given as -1.2 V at VGS=0V and IS=-0.75A. |
| 3 | DRAIN | passive | Drain of the P-channel MOSFET; drain-source breakdown V(BR)DSS is -20 V at VGS=0V and ID=-250µA, with zero-gate drain current of -1 µA at VDS=-20V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC Micro Commercial Components |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Drain Current-Continuous | ID | -3.4 | A | TA=25°C | 1 | ||
| Drain Current-Continuous | ID | -2.7 | A | TA=70°C | 1 | ||
| Drain Current-Pulse | IDM | -14 | A | Note 2 | 1 | ||
| Power Dissipation | PD | 1 | W | 1 | |||
| Operating Junction Temperature Range | -55 | 150 | °C | 1 | |||
| Storage Temperature Range | -55 | 150 | °C | 1 | |||
| Maximum Thermal Resistance Junction to Ambient | 125 | °C/W | Note 2: Surface Mounted on FR4 Board t<5sec | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS=0V, ID=-250µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -0.4 | -0.62 | -1 | V | VDS=VGS, ID=-250µA | 2 |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS =± 10V, VDS =0V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS =-20V, VGS =0V | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 42 | 51 | mΩ | VGS=-4.5V, ID=-3.4A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 55 | 67 | mΩ | VGS=-2.5V, ID=-3.0A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 76 | 91 | mΩ | VGS=-1.8V, ID=-2.5A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-0.75A | 2 |
CAD (KiCad official)
- Symbol:
SI2301AHE3-TP - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2301ahe3-tp-etched.step/si2301ahe3-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2301ahe3-tp.step/si2301ahe3-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC Micro Commercial Components datasheet (4 pp, sha256
e1a4174e6cce1f88, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).