# SI2300DS-T1-MS

**MSKSEMI** · MOSFETs · SOT-23-3L

SI2300DS-T1-MS from MSKSEMI, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated at ±12 V (absolute maximum), and the part is specified for operation with gate voltages as low as 2.5 V. |
| 2 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated at 20 V and continuous drain current at 6 A (TA = 25 ℃). The datasheet prints this pin as D on pin 2, which differs from the usual SOT-23 assignment; verify against the package drawing. |
| 3 | S | passive | Source of the N-channel MOSFET; the body diode forward current IS is rated at 4.5 A maximum (Note 2). The datasheet prints this pin as S on pin 3, which differs from the usual SOT-23 assignment; verify against the package drawing. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | 22.5 |  | V | VGS=0V ID=250μA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=20V,VGS=0V | 3 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±12V,VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.65 | 1 | V | VDS=VGS,ID=250μA | 3 |
| Drain-Source On-State Resistance | RDS(ON) |  | 22 | 27 | mΩ | VGS=4.5V, ID=4.0 A | 3 |
| Drain-Source On-State Resistance | RDS(ON) |  | 28 | 40 | mΩ | VGS=2.5V, ID=4.5A | 3 |
| Total Gate Charge | Qg |  | 10 | 15 | nC | VDS=10V,ID=3A,VGS=4.5V | 3 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=1A | 3 |
| Diode Forward Current | IS |  |  | 4.5 | A |  | 3 |
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 2 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 2 |
| Continuous Drain Current | ID |  |  | 6 | A | TA =25℃ | 2 |
| Continuous Drain Current | ID |  |  | 3.6 | A | TA =70℃ | 2 |
| Drain Current-Pulsed | IDM |  |  | 15 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 2 |
| Maximum Power Dissipation | PD |  |  | 1.25 | W |  | 2 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 100 | ℃/W | Note 2: surface mounted on FR4 Board, t ≤ 10 sec | 2 |

## CAD (KiCad official)

- Symbol: `SI2300DS-T1-MS`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `si2300ds-t1-ms-etched.step` / `si2300ds-t1-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si2300ds-t1-ms.step` / `si2300ds-t1-ms.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590455894291865600) (8 pp, sha256 `9ead2f2efbc0ec44`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/si2300ds-t1-ms-datasheet.pdf)