component
SI2300DS-T1-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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si2300ds-t1-ms: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -21,6 +21,30 @@ SI2300DS-T1-MS from MSKSEMI, in a SOT-23-3L. Pinout and pin descriptions extract | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | BVDSS | 20 | 22.5 | | V | VGS=0V ID=250μA | 3 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=20V,VGS=0V | 3 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V,VDS=0V | 3 |+| Gate Threshold Voltage | VGS(th) | 0.5 | 0.65 | 1 | V | VDS=VGS,ID=250μA | 3 |+| Drain-Source On-State Resistance | RDS(ON) | | 22 | 27 | mΩ | VGS=4.5V, ID=4.0 A | 3 |+| Drain-Source On-State Resistance | RDS(ON) | | 28 | 40 | mΩ | VGS=2.5V, ID=4.5A | 3 |+| Total Gate Charge | Qg | | 10 | 15 | nC | VDS=10V,ID=3A,VGS=4.5V | 3 |+| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=1A | 3 |+| Diode Forward Current | IS | | | 4.5 | A | | 3 |+| Drain-Source Voltage | VDS | | | 20 | V | | 2 |+| Gate-Source Voltage | VGS | -12 | | 12 | V | | 2 |+| Continuous Drain Current | ID | | | 6 | A | TA =25℃ | 2 |+| Continuous Drain Current | ID | | | 3.6 | A | TA =70℃ | 2 |+| Drain Current-Pulsed | IDM | | | 15 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 2 |+| Maximum Power Dissipation | PD | | | 1.25 | W | | 2 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 2 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | | 100 | ℃/W | Note 2: surface mounted on FR4 Board, t ≤ 10 sec | 2 |+ ## CAD (KiCad official) - Symbol: `SI2300DS-T1-MS`
page.json+212−1@@ -147,6 +147,217 @@ "Package": "SOT-23-3L", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "9ead2f2efbc0ec44",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": 22.5,+ "max": null,+ "conditions": "VGS=0V ID=250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=20V,VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±12V,VDS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.5,+ "typ": 0.65,+ "max": 1,+ "conditions": "VDS=VGS,ID=250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 22,+ "max": 27,+ "conditions": "VGS=4.5V, ID=4.0 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 28,+ "max": 40,+ "conditions": "VGS=2.5V, ID=4.5A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 10,+ "max": 15,+ "conditions": "VDS=10V,ID=3A,VGS=4.5V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS=0V,IS=1A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "TA =25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3.6,+ "conditions": "TA =70℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "Note 1: repetitive rating, pulse width limited by maximum junction temperature",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "Note 2: surface mounted on FR4 Board, t ≤ 10 sec",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +399,4 @@ "visibility": { "public": true }-}+}