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SI1539CDL-T1-GE3

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Vishay Intertech MOSFETs, SC-70-6(SOT-363). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SI1539CDL-T1-GE3

Vishay Intertech · MOSFETs · SC-70-6(SOT-363)

SI1539CDL-T1-GE3 from Vishay Intertech, in a SC-70-6(SOT-363). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the N-channel MOSFET; the datasheet gives a continuous source-drain diode current of 0.3 A at TC = 25 °C for this channel.
2 G1 input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V.
3 D2 passive Drain terminal of the P-channel MOSFET; the drain-source voltage is rated at -30 V and the continuous drain current at TC = 25 °C is -0.5 A.
4 S2 passive Source terminal of the P-channel MOSFET; the datasheet gives a continuous source-drain diode current of -0.3 A at TC = 25 °C for this channel.
5 G2 input Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±20 V.
6 D1 passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 30 V and the continuous drain current at TC = 25 °C is 0.7 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SC-70-6(SOT-363)
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDS 30 V N-Channel 1
Drain-Source Voltage (P-Channel) VDS -30 V P-Channel 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (N-Channel) ID 0.7 A TJ = 150 °C, TC = 25 °C, N-Channel 1
Continuous Drain Current (P-Channel) ID -0.5 A TJ = 150 °C, TC = 25 °C, P-Channel 1
Continuous Drain Current (P-Channel) ID -0.4 A TJ = 150 °C, TA = 25 °C, P-Channel 1
Source-Drain Current Diode Current (N-Channel) IS 0.3 A TC = 25 °C, N-Channel 1
Source-Drain Current Diode Current (P-Channel) IS -0.3 A TC = 25 °C, P-Channel 1
Pulsed Drain Current (N-Channel) IDM 2 A N-Channel 1
Pulsed Drain Current (P-Channel) IDM -1 A P-Channel 1
Maximum Power Dissipation PD 0.34 W TC = 25 °C, N-Channel and P-Channel 1
Maximum Power Dissipation PD 0.29 W TA = 25 °C, N-Channel and P-Channel 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (N-Channel) RthJA 365 438 °C/W t ≤ 10 s, N-Channel 1
Maximum Junction-to-Ambient (P-Channel) RthJA 365 438 °C/W t ≤ 10 s, P-Channel 1
Maximum Junction-to-Ambient, steady state RthJA 486 °C/W Steady state, N-Channel and P-Channel 1
Maximum Junction-to-Foot (Drain), steady state (N-Channel) RthJF 308 370 °C/W Steady state, N-Channel 1
Maximum Junction-to-Foot (Drain), steady state (P-Channel) RthJF 308 370 °C/W Steady state, P-Channel 1
Drain-Source Breakdown Voltage (N-Channel) VDS 30 V VGS = 0 V, ID = 250 µA, N-Ch 2
Drain-Source Breakdown Voltage (P-Channel) VDS -30 V VGS = 0 V, ID = -250 µA, P-Ch 2
Gate-Source Threshold Voltage (N-Channel) VGS(th) 1.2 2.5 V VDS = VGS, ID = 250 µA, N-Ch 2
Gate-Source Threshold Voltage (P-Channel) VGS(th) -1.2 -2.5 V VDS = VGS, ID = -250 µA, P-Ch 2
Gate-Body Leakage (N-Channel) IGSS -100 100 nA VDS = 0 V, VGS = ±20 V, N-Ch 2
Gate-Body Leakage (P-Channel) IGSS -100 100 nA VDS = 0 V, VGS = ±20 V, P-Ch 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 1 µA VDS = 30 V, VGS = 0 V, N-Ch 2
Zero Gate Voltage Drain Current (P-Channel) IDSS -1 µA VDS = -30 V, VGS = 0 V, P-Ch 2
On-State Drain Current (N-Channel) ID(on) 2 A VDS = 5 V, VGS = 10 V, N-Ch 2
On-State Drain Current (P-Channel) ID(on) -1 A VDS = -5 V, VGS = -10 V, P-Ch 2
Drain-Source On-State Resistance (N-Channel, 10 V) RDS(on) 0.323 0.388 Ω VGS = 10 V, ID = 0.6 A, N-Ch 2
Drain-Source On-State Resistance (P-Channel, -10 V) RDS(on) 0.74 0.89 Ω VGS = -10 V, ID = -0.4 A, P-Ch 2
Drain-Source On-State Resistance (N-Channel, 4.5 V) RDS(on) 0.437 0.525 Ω VGS = 4.5 V, ID = 0.1 A, N-Ch 2
Drain-Source On-State Resistance (P-Channel, -4.5 V) RDS(on) 1.4 1.7 Ω VGS = -4.5 V, ID = -0.1 A, P-Ch 2
Total Gate Charge (N-Channel, 10 V) Qg 1 1.5 nC VDS = 15 V, VGS = 10 V, ID = 0.6 A, N-Ch 2
Total Gate Charge (P-Channel, -10 V) Qg 1.5 3 nC VDS = -15 V, VGS = -10 V, ID = -0.4 A, P-Ch 2
Total Gate Charge (N-Channel, 4.5 V) Qg 0.55 1.1 nC VDS = 15 V, VGS = 4.5 V, ID = 0.6 A, N-Ch 2
Total Gate Charge (P-Channel, -4.5 V) Qg 0.8 1.2 nC VDS = -15 V, VGS = -4.5 V, ID = -0.4 A, P-Ch 2
Gate Resistance (N-Channel) Rg 0.7 3.7 7.4 f = 1 MHz, N-Ch 2
Gate Resistance (P-Channel) Rg 1.7 8.3 16.6 f = 1 MHz, P-Ch 2
Turn-On Delay Time (N-Channel, VGEN 10 V) td(on) 2 4 ns VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 1, N-Channel 3
Turn-On Delay Time (P-Channel, VGEN -10 V) td(on) 1 2 ns VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -10 V, Rg = 1, P-Channel 3
Rise Time (N-Channel, VGEN 10 V) tr 14 21 ns VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 1, N-Channel 3
Rise Time (P-Channel, VGEN -10 V) tr 9 18 ns VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -10 V, Rg = 1, P-Channel 3
Turn-Off Delay Time (N-Channel, VGEN 10 V) td(off) 11 20 ns VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 1, N-Channel 3
Turn-Off Delay Time (P-Channel, VGEN -10 V) td(off) 8 16 ns VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -10 V, Rg = 1, P-Channel 3
Fall Time (N-Channel, VGEN 10 V) tf 9 18 ns VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 1, N-Channel 3
Fall Time (P-Channel, VGEN -10 V) tf 8 16 ns VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -10 V, Rg = 1, P-Channel 3
Turn-On Delay Time (N-Channel, VGEN 4.5 V) td(on) 26 39 ns VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 4.5 V, Rg = 1, N-Channel 3
Turn-On Delay Time (P-Channel, VGEN -4.5 V) td(on) 32 48 ns VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -4.5 V, Rg = 1, P-Channel 3
Rise Time (N-Channel, VGEN 4.5 V) tr 25 38 ns VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 4.5 V, Rg = 1, N-Channel 3
Rise Time (P-Channel, VGEN -4.5 V) tr 19 29 ns VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -4.5 V, Rg = 1, P-Channel 3
Turn-Off Delay Time (N-Channel, VGEN 4.5 V) td(off) 14 21 ns VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 4.5 V, Rg = 1, N-Channel 3
Turn-Off Delay Time (P-Channel, VGEN -4.5 V) td(off) 4 8 ns VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -4.5 V, Rg = 1, P-Channel 3
Fall Time (N-Channel, VGEN 4.5 V) tf 15 23 ns VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 4.5 V, Rg = 1, N-Channel 3
Fall Time (P-Channel, VGEN -4.5 V) tf 10 20 ns VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -4.5 V, Rg = 1, P-Channel 3
Body Diode Voltage (N-Channel) VSD 0.8 1.2 V IS = 0.5 A, N-Ch 3
Body Diode Voltage (P-Channel) VSD -0.8 -1.2 V IS = -0.4 A, P-Ch 3
Body Diode Reverse Recovery Time (N-Channel) trr 10 20 ns IF = 0.5 A, dI/dt = 100 A/µs, TJ = 25 °C, N-Channel 3
Body Diode Reverse Recovery Time (P-Channel) trr 16 24 ns IF = -0.5 A, dI/dt = -100 A/µs, TJ = 25 °C, P-Channel 3
Body Diode Reverse Recovery Charge (N-Channel) Qrr 3 6 nC 3
Body Diode Reverse Recovery Charge (P-Channel) Qrr 8 16 nC 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper The 6-pin SC-70 evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as 13

CAD (KiCad official)

  • Symbol: SI1539CDL-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6(SOT-363) (KiCad packages3D, STEP)
  • 3D model files: si1539cdl-t1-ge3-etched.step / si1539cdl-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1539cdl-t1-ge3.step / si1539cdl-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (16 pp, sha256 b1ab959bea3aa75e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF