component
SI1539CDL-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SC-70-6(SOT-363). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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Datasheet
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Contents
README
markdownSI1539CDL-T1-GE3
Vishay Intertech · MOSFETs · SC-70-6(SOT-363)
SI1539CDL-T1-GE3 from Vishay Intertech, in a SC-70-6(SOT-363). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the N-channel MOSFET; the datasheet gives a continuous source-drain diode current of 0.3 A at TC = 25 °C for this channel. |
| 2 | G1 | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V. |
| 3 | D2 | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage is rated at -30 V and the continuous drain current at TC = 25 °C is -0.5 A. |
| 4 | S2 | passive | Source terminal of the P-channel MOSFET; the datasheet gives a continuous source-drain diode current of -0.3 A at TC = 25 °C for this channel. |
| 5 | G2 | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±20 V. |
| 6 | D1 | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 30 V and the continuous drain current at TC = 25 °C is 0.7 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SC-70-6(SOT-363) |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 30 | V | N-Channel | 1 | ||
| Drain-Source Voltage (P-Channel) | VDS | -30 | V | P-Channel | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 0.7 | A | TJ = 150 °C, TC = 25 °C, N-Channel | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -0.5 | A | TJ = 150 °C, TC = 25 °C, P-Channel | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -0.4 | A | TJ = 150 °C, TA = 25 °C, P-Channel | 1 | ||
| Source-Drain Current Diode Current (N-Channel) | IS | 0.3 | A | TC = 25 °C, N-Channel | 1 | ||
| Source-Drain Current Diode Current (P-Channel) | IS | -0.3 | A | TC = 25 °C, P-Channel | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 2 | A | N-Channel | 1 | ||
| Pulsed Drain Current (P-Channel) | IDM | -1 | A | P-Channel | 1 | ||
| Maximum Power Dissipation | PD | 0.34 | W | TC = 25 °C, N-Channel and P-Channel | 1 | ||
| Maximum Power Dissipation | PD | 0.29 | W | TA = 25 °C, N-Channel and P-Channel | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (N-Channel) | RthJA | 365 | 438 | °C/W | t ≤ 10 s, N-Channel | 1 | |
| Maximum Junction-to-Ambient (P-Channel) | RthJA | 365 | 438 | °C/W | t ≤ 10 s, P-Channel | 1 | |
| Maximum Junction-to-Ambient, steady state | RthJA | 486 | °C/W | Steady state, N-Channel and P-Channel | 1 | ||
| Maximum Junction-to-Foot (Drain), steady state (N-Channel) | RthJF | 308 | 370 | °C/W | Steady state, N-Channel | 1 | |
| Maximum Junction-to-Foot (Drain), steady state (P-Channel) | RthJF | 308 | 370 | °C/W | Steady state, P-Channel | 1 | |
| Drain-Source Breakdown Voltage (N-Channel) | VDS | 30 | V | VGS = 0 V, ID = 250 µA, N-Ch | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | VDS | -30 | V | VGS = 0 V, ID = -250 µA, P-Ch | 2 | ||
| Gate-Source Threshold Voltage (N-Channel) | VGS(th) | 1.2 | 2.5 | V | VDS = VGS, ID = 250 µA, N-Ch | 2 | |
| Gate-Source Threshold Voltage (P-Channel) | VGS(th) | -1.2 | -2.5 | V | VDS = VGS, ID = -250 µA, P-Ch | 2 | |
| Gate-Body Leakage (N-Channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V, N-Ch | 2 | |
| Gate-Body Leakage (P-Channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V, P-Ch | 2 | |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V, P-Ch | 2 | ||
| On-State Drain Current (N-Channel) | ID(on) | 2 | A | VDS = 5 V, VGS = 10 V, N-Ch | 2 | ||
| On-State Drain Current (P-Channel) | ID(on) | -1 | A | VDS = -5 V, VGS = -10 V, P-Ch | 2 | ||
| Drain-Source On-State Resistance (N-Channel, 10 V) | RDS(on) | 0.323 | 0.388 | Ω | VGS = 10 V, ID = 0.6 A, N-Ch | 2 | |
| Drain-Source On-State Resistance (P-Channel, -10 V) | RDS(on) | 0.74 | 0.89 | Ω | VGS = -10 V, ID = -0.4 A, P-Ch | 2 | |
| Drain-Source On-State Resistance (N-Channel, 4.5 V) | RDS(on) | 0.437 | 0.525 | Ω | VGS = 4.5 V, ID = 0.1 A, N-Ch | 2 | |
| Drain-Source On-State Resistance (P-Channel, -4.5 V) | RDS(on) | 1.4 | 1.7 | Ω | VGS = -4.5 V, ID = -0.1 A, P-Ch | 2 | |
| Total Gate Charge (N-Channel, 10 V) | Qg | 1 | 1.5 | nC | VDS = 15 V, VGS = 10 V, ID = 0.6 A, N-Ch | 2 | |
| Total Gate Charge (P-Channel, -10 V) | Qg | 1.5 | 3 | nC | VDS = -15 V, VGS = -10 V, ID = -0.4 A, P-Ch | 2 | |
| Total Gate Charge (N-Channel, 4.5 V) | Qg | 0.55 | 1.1 | nC | VDS = 15 V, VGS = 4.5 V, ID = 0.6 A, N-Ch | 2 | |
| Total Gate Charge (P-Channel, -4.5 V) | Qg | 0.8 | 1.2 | nC | VDS = -15 V, VGS = -4.5 V, ID = -0.4 A, P-Ch | 2 | |
| Gate Resistance (N-Channel) | Rg | 0.7 | 3.7 | 7.4 | f = 1 MHz, N-Ch | 2 | |
| Gate Resistance (P-Channel) | Rg | 1.7 | 8.3 | 16.6 | f = 1 MHz, P-Ch | 2 | |
| Turn-On Delay Time (N-Channel, VGEN 10 V) | td(on) | 2 | 4 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 1, N-Channel | 3 | |
| Turn-On Delay Time (P-Channel, VGEN -10 V) | td(on) | 1 | 2 | ns | VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -10 V, Rg = 1, P-Channel | 3 | |
| Rise Time (N-Channel, VGEN 10 V) | tr | 14 | 21 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 1, N-Channel | 3 | |
| Rise Time (P-Channel, VGEN -10 V) | tr | 9 | 18 | ns | VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -10 V, Rg = 1, P-Channel | 3 | |
| Turn-Off Delay Time (N-Channel, VGEN 10 V) | td(off) | 11 | 20 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 1, N-Channel | 3 | |
| Turn-Off Delay Time (P-Channel, VGEN -10 V) | td(off) | 8 | 16 | ns | VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -10 V, Rg = 1, P-Channel | 3 | |
| Fall Time (N-Channel, VGEN 10 V) | tf | 9 | 18 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 1, N-Channel | 3 | |
| Fall Time (P-Channel, VGEN -10 V) | tf | 8 | 16 | ns | VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -10 V, Rg = 1, P-Channel | 3 | |
| Turn-On Delay Time (N-Channel, VGEN 4.5 V) | td(on) | 26 | 39 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 4.5 V, Rg = 1, N-Channel | 3 | |
| Turn-On Delay Time (P-Channel, VGEN -4.5 V) | td(on) | 32 | 48 | ns | VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -4.5 V, Rg = 1, P-Channel | 3 | |
| Rise Time (N-Channel, VGEN 4.5 V) | tr | 25 | 38 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 4.5 V, Rg = 1, N-Channel | 3 | |
| Rise Time (P-Channel, VGEN -4.5 V) | tr | 19 | 29 | ns | VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -4.5 V, Rg = 1, P-Channel | 3 | |
| Turn-Off Delay Time (N-Channel, VGEN 4.5 V) | td(off) | 14 | 21 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 4.5 V, Rg = 1, N-Channel | 3 | |
| Turn-Off Delay Time (P-Channel, VGEN -4.5 V) | td(off) | 4 | 8 | ns | VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -4.5 V, Rg = 1, P-Channel | 3 | |
| Fall Time (N-Channel, VGEN 4.5 V) | tf | 15 | 23 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 4.5 V, Rg = 1, N-Channel | 3 | |
| Fall Time (P-Channel, VGEN -4.5 V) | tf | 10 | 20 | ns | VDD = -15 V, RL = 38, ID -0.4 A, VGEN = -4.5 V, Rg = 1, P-Channel | 3 | |
| Body Diode Voltage (N-Channel) | VSD | 0.8 | 1.2 | V | IS = 0.5 A, N-Ch | 3 | |
| Body Diode Voltage (P-Channel) | VSD | -0.8 | -1.2 | V | IS = -0.4 A, P-Ch | 3 | |
| Body Diode Reverse Recovery Time (N-Channel) | trr | 10 | 20 | ns | IF = 0.5 A, dI/dt = 100 A/µs, TJ = 25 °C, N-Channel | 3 | |
| Body Diode Reverse Recovery Time (P-Channel) | trr | 16 | 24 | ns | IF = -0.5 A, dI/dt = -100 A/µs, TJ = 25 °C, P-Channel | 3 | |
| Body Diode Reverse Recovery Charge (N-Channel) | Qrr | 3 | 6 | nC | 3 | ||
| Body Diode Reverse Recovery Charge (P-Channel) | Qrr | 8 | 16 | nC | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | The 6-pin SC-70 evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as | 13 |
CAD (KiCad official)
- Symbol:
SI1539CDL-T1-GE3 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SC-70-6(SOT-363) (KiCad packages3D, STEP)
- 3D model files:
si1539cdl-t1-ge3-etched.step/si1539cdl-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si1539cdl-t1-ge3.step/si1539cdl-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (16 pp, sha256
b1ab959bea3aa75e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).