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SI1302DL-T1-E3
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Vishay Intertech MOSFETs, SC-70-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI1302DL-T1-E3
Vishay Intertech · MOSFETs · SC-70-3
SI1302DL-T1-E3 from Vishay Intertech, in a SC-70-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGS). |
| 2 | S | passive | Source of the N-channel MOSFET; the device is rated 30 V drain-source (VDS) with source as the return for the drain current. |
| 3 | D | passive | Drain of the N-channel MOSFET; continuous drain current is 0.64 A at TA = 25 °C (5 s) and 0.60 A steady state, with pulsed drain current of 1.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SC-70-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 0.64 | A | TJ = 150 °C, TA = 25 °C, 5 s | 1 | ||
| Continuous Drain Current | ID | 0.6 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current | ID | 0.51 | A | TJ = 150 °C, TA = 70 °C, 5 s | 1 | ||
| Continuous Drain Current | ID | 0.48 | A | TJ = 150 °C, TA = 70 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | 1.5 | A | 1 | |||
| Continuous Diode Current (Diode Conduction) | IS | 0.26 | A | 5 s | 1 | ||
| Continuous Diode Current (Diode Conduction) | IS | 0.23 | A | steady state | 1 | ||
| Maximum Power Dissipation | PD | 0.31 | W | TA = 25 °C, 5 s | 1 | ||
| Maximum Power Dissipation | PD | 0.28 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation | PD | 0.2 | W | TA = 70 °C, 5 s | 1 | ||
| Maximum Power Dissipation | PD | 0.18 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 355 | 400 | °C/W | t 5 s | 1 | |
| Maximum Junction-to-Ambient | RthJA | 380 | 450 | °C/W | steady state | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 285 | 340 | °C/W | steady state | 1 | |
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.41 | 0.48 | Ω | VGS = 10 V, ID = 0.6 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.6 | 0.7 | Ω | VGS = 4.5 V, ID = 0.2 A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | IS = 0.23 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 0.86 | 1.4 | nC | VDS = 15 V, VGS = 10 V, ID = 0.6 A | 2 | |
| Turn-On Delay Time | td(on) | 5 | 10 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 6 | 2 | |
| Rise Time | tr | 8 | 15 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 6 | 2 | |
| Turn-Off Delay Time | td(off) | 8 | 15 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 6 | 2 | |
| Fall Time | tf | 7 | 15 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 6 | 2 | |
| Source-Drain Reverse Recovery Time | trr | 15 | 30 | ns | IF = 0.23 A, dI/dt = 100 A/µs | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | Figure 2 shows the 3-pin and 6-pin SC-70 evaluation boards (EVB). Both measure 0.6 inches by 0.5 inches. Their copper | 6 |
CAD (KiCad official)
- Symbol:
SI1302DL-T1-E3 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SC-70-3 (KiCad packages3D, STEP)
- 3D model files:
si1302dl-t1-e3-etched.step/si1302dl-t1-e3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si1302dl-t1-e3.step/si1302dl-t1-e3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
642b40379b3f919c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI1302DL-T1-E3
**Vishay Intertech** · MOSFETs · SC-70-3
SI1302DL-T1-E3 from Vishay Intertech, in a SC-70-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGS). |
| 2 | S | passive | Source of the N-channel MOSFET; the device is rated 30 V drain-source (VDS) with source as the return for the drain current. |
| 3 | D | passive | Drain of the N-channel MOSFET; continuous drain current is 0.64 A at TA = 25 °C (5 s) and 0.60 A steady state, with pulsed drain current of 1.5 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SC-70-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 0.64 | A | TJ = 150 °C, TA = 25 °C, 5 s | 1 |
| Continuous Drain Current | ID | | | 0.6 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 |
| Continuous Drain Current | ID | | | 0.51 | A | TJ = 150 °C, TA = 70 °C, 5 s | 1 |
| Continuous Drain Current | ID | | | 0.48 | A | TJ = 150 °C, TA = 70 °C, steady state | 1 |
| Pulsed Drain Current | IDM | | | 1.5 | A | | 1 |
| Continuous Diode Current (Diode Conduction) | IS | | | 0.26 | A | 5 s | 1 |
| Continuous Diode Current (Diode Conduction) | IS | | | 0.23 | A | steady state | 1 |
| Maximum Power Dissipation | PD | | | 0.31 | W | TA = 25 °C, 5 s | 1 |
| Maximum Power Dissipation | PD | | | 0.28 | W | TA = 25 °C, steady state | 1 |
| Maximum Power Dissipation | PD | | | 0.2 | W | TA = 70 °C, 5 s | 1 |
| Maximum Power Dissipation | PD | | | 0.18 | W | TA = 70 °C, steady state | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 355 | 400 | °C/W | t 5 s | 1 |
| Maximum Junction-to-Ambient | RthJA | | 380 | 450 | °C/W | steady state | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF | | 285 | 340 | °C/W | steady state | 1 |
| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.41 | 0.48 | Ω | VGS = 10 V, ID = 0.6 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.6 | 0.7 | Ω | VGS = 4.5 V, ID = 0.2 A | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | IS = 0.23 A, VGS = 0 V | 2 |
| Total Gate Charge | Qg | | 0.86 | 1.4 | nC | VDS = 15 V, VGS = 10 V, ID = 0.6 A | 2 |
| Turn-On Delay Time | td(on) | | 5 | 10 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 6 | 2 |
| Rise Time | tr | | 8 | 15 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 6 | 2 |
| Turn-Off Delay Time | td(off) | | 8 | 15 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 6 | 2 |
| Fall Time | tf | | 7 | 15 | ns | VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 6 | 2 |
| Source-Drain Reverse Recovery Time | trr | | 15 | 30 | ns | IF = 0.23 A, dI/dt = 100 A/µs | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | | Figure 2 shows the 3-pin and 6-pin SC-70 evaluation boards (EVB). Both measure 0.6 inches by 0.5 inches. Their copper | 6 |
## CAD (KiCad official)
- Symbol: `SI1302DL-T1-E3`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SC-70-3 (KiCad packages3D, STEP)
- 3D model files: `si1302dl-t1-e3-etched.step` / `si1302dl-t1-e3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si1302dl-t1-e3.step` / `si1302dl-t1-e3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588881307019448320) (9 pp, sha256 `642b40379b3f919c`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si1302dl-t1-e3-datasheet.pdf)