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SI1302DL-T1-E3

Vishay Intertech · MOSFETs · SC-70-3

SI1302DL-T1-E3 from Vishay Intertech, in a SC-70-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGS).
2 S passive Source of the N-channel MOSFET; the device is rated 30 V drain-source (VDS) with source as the return for the drain current.
3 D passive Drain of the N-channel MOSFET; continuous drain current is 0.64 A at TA = 25 °C (5 s) and 0.60 A steady state, with pulsed drain current of 1.5 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SC-70-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 0.64 A TJ = 150 °C, TA = 25 °C, 5 s 1
Continuous Drain Current ID 0.6 A TJ = 150 °C, TA = 25 °C, steady state 1
Continuous Drain Current ID 0.51 A TJ = 150 °C, TA = 70 °C, 5 s 1
Continuous Drain Current ID 0.48 A TJ = 150 °C, TA = 70 °C, steady state 1
Pulsed Drain Current IDM 1.5 A 1
Continuous Diode Current (Diode Conduction) IS 0.26 A 5 s 1
Continuous Diode Current (Diode Conduction) IS 0.23 A steady state 1
Maximum Power Dissipation PD 0.31 W TA = 25 °C, 5 s 1
Maximum Power Dissipation PD 0.28 W TA = 25 °C, steady state 1
Maximum Power Dissipation PD 0.2 W TA = 70 °C, 5 s 1
Maximum Power Dissipation PD 0.18 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 355 400 °C/W t 5 s 1
Maximum Junction-to-Ambient RthJA 380 450 °C/W steady state 1
Maximum Junction-to-Foot (Drain) RthJF 285 340 °C/W steady state 1
Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Drain-Source On-State Resistance RDS(on) 0.41 0.48 Ω VGS = 10 V, ID = 0.6 A 2
Drain-Source On-State Resistance RDS(on) 0.6 0.7 Ω VGS = 4.5 V, ID = 0.2 A 2
Diode Forward Voltage VSD 0.8 1.2 V IS = 0.23 A, VGS = 0 V 2
Total Gate Charge Qg 0.86 1.4 nC VDS = 15 V, VGS = 10 V, ID = 0.6 A 2
Turn-On Delay Time td(on) 5 10 ns VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 6 2
Rise Time tr 8 15 ns VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 6 2
Turn-Off Delay Time td(off) 8 15 ns VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 6 2
Fall Time tf 7 15 ns VDD = 15 V, RL = 30, ID 0.5 A, VGEN = 10 V, Rg = 6 2
Source-Drain Reverse Recovery Time trr 15 30 ns IF = 0.23 A, dI/dt = 100 A/µs 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper Figure 2 shows the 3-pin and 6-pin SC-70 evaluation boards (EVB). Both measure 0.6 inches by 0.5 inches. Their copper 6

CAD (KiCad official)

  • Symbol: SI1302DL-T1-E3
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70-3 (KiCad packages3D, STEP)
  • 3D model files: si1302dl-t1-e3-etched.step / si1302dl-t1-e3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1302dl-t1-e3.step / si1302dl-t1-e3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 642b40379b3f919c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF