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SI1024X-T1-GE3
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Vishay Intertech MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SI1024X-T1-GE3
Vishay Intertech · MOSFETs · SOT-563
SI1024X-T1-GE3 from Vishay Intertech, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; the datasheet shows a 100 Ω gate resistor and ESD protection on the gate of each MOSFET (gate-source ESD rated 2000 V HBM). |
| 2 | G1 | input | Gate of MOSFET 1, ESD protected with an internal 100 Ω series resistor, absolute maximum gate-source voltage ±6 V and threshold 0.45 to 0.9 V. |
| 3 | D2 | passive | Drain of MOSFET 2, rated 20 V drain-source maximum with 485 mA continuous drain current at steady state, TA = 25 °C. |
| 4 | S2 | passive | Source of MOSFET 2, with continuous source (diode) current of 380 mA steady state. |
| 5 | G2 | input | Gate of MOSFET 2, ESD protected with an internal 100 Ω series resistor, absolute maximum gate-source voltage ±6 V and threshold 0.45 to 0.9 V. |
| 6 | D1 | passive | Drain of MOSFET 1, rated 20 V drain-source maximum with 485 mA continuous drain current at steady state, TA = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -6 | 6 | V | 1 | ||
| Continuous Drain Current | ID | 515 | mA | TJ = 150 °C, TA = 25 °C, 5 s | 1 | ||
| Continuous Drain Current | ID | 485 | mA | TJ = 150 °C, TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current | ID | 370 | mA | TJ = 150 °C, TA = 85 °C, 5 s | 1 | ||
| Continuous Drain Current | ID | 350 | mA | TJ = 150 °C, TA = 85 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | 650 | mA | Pulse width limited by maximum junction temperature (note b) | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 450 | mA | TA = 25 °C, 5 s | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 380 | mA | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation | PD | 280 | mW | TA = 25 °C, 5 s | 1 | ||
| Maximum Power Dissipation | PD | 250 | mW | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation | PD | 145 | mW | TA = 85 °C, 5 s | 1 | ||
| Maximum Power Dissipation | PD | 130 | mW | TA = 85 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Gate-Source ESD Rating (HBM) | ESD | 2000 | V | HBM, Method 3015 | 1 | ||
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.9 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -1 | 1 | µA | VDS = 0 V, VGS = ± 4.5 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 0.3 | 100 | nA | VDS = 20 V, VGS = 0 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS = 20 V, VGS = 0 V, TJ = 85 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.41 | 0.7 | Ω | VGS = 4.5 V, ID = 600 mA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.53 | 0.85 | Ω | VGS = 2.5 V, ID = 500 mA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.7 | 1.25 | Ω | VGS = 1.8 V, ID = 350 mA | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | IS = 150 mA, VGS = 0 V | 2 | |
| Thermal Resistance, Junction-to-Ambient | RthJA | 500 | °C/W | Per unit base, surface mounted (page 4 figure note 2) | 4 |
CAD (KiCad official)
- Symbol:
SI1024X-T1-GE3 - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
si1024x-t1-ge3-etched.step/si1024x-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si1024x-t1-ge3.step/si1024x-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (7 pp, sha256
ce7a2ed23aba35a6, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SI1024X-T1-GE3
**Vishay Intertech** · MOSFETs · SOT-563
SI1024X-T1-GE3 from Vishay Intertech, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; the datasheet shows a 100 Ω gate resistor and ESD protection on the gate of each MOSFET (gate-source ESD rated 2000 V HBM). |
| 2 | G1 | input | Gate of MOSFET 1, ESD protected with an internal 100 Ω series resistor, absolute maximum gate-source voltage ±6 V and threshold 0.45 to 0.9 V. |
| 3 | D2 | passive | Drain of MOSFET 2, rated 20 V drain-source maximum with 485 mA continuous drain current at steady state, TA = 25 °C. |
| 4 | S2 | passive | Source of MOSFET 2, with continuous source (diode) current of 380 mA steady state. |
| 5 | G2 | input | Gate of MOSFET 2, ESD protected with an internal 100 Ω series resistor, absolute maximum gate-source voltage ±6 V and threshold 0.45 to 0.9 V. |
| 6 | D1 | passive | Drain of MOSFET 1, rated 20 V drain-source maximum with 485 mA continuous drain current at steady state, TA = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGS | -6 | | 6 | V | | 1 |
| Continuous Drain Current | ID | | | 515 | mA | TJ = 150 °C, TA = 25 °C, 5 s | 1 |
| Continuous Drain Current | ID | | | 485 | mA | TJ = 150 °C, TA = 25 °C, steady state | 1 |
| Continuous Drain Current | ID | | | 370 | mA | TJ = 150 °C, TA = 85 °C, 5 s | 1 |
| Continuous Drain Current | ID | | | 350 | mA | TJ = 150 °C, TA = 85 °C, steady state | 1 |
| Pulsed Drain Current | IDM | | | 650 | mA | Pulse width limited by maximum junction temperature (note b) | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 450 | mA | TA = 25 °C, 5 s | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 380 | mA | TA = 25 °C, steady state | 1 |
| Maximum Power Dissipation | PD | | | 280 | mW | TA = 25 °C, 5 s | 1 |
| Maximum Power Dissipation | PD | | | 250 | mW | TA = 25 °C, steady state | 1 |
| Maximum Power Dissipation | PD | | | 145 | mW | TA = 85 °C, 5 s | 1 |
| Maximum Power Dissipation | PD | | | 130 | mW | TA = 85 °C, steady state | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Gate-Source ESD Rating (HBM) | ESD | | | 2000 | V | HBM, Method 3015 | 1 |
| Gate Threshold Voltage | VGS(th) | 0.45 | | 0.9 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -1 | | 1 | µA | VDS = 0 V, VGS = ± 4.5 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | 0.3 | 100 | nA | VDS = 20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 5 | µA | VDS = 20 V, VGS = 0 V, TJ = 85 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.41 | 0.7 | Ω | VGS = 4.5 V, ID = 600 mA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.53 | 0.85 | Ω | VGS = 2.5 V, ID = 500 mA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.7 | 1.25 | Ω | VGS = 1.8 V, ID = 350 mA | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | IS = 150 mA, VGS = 0 V | 2 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | 500 | | °C/W | Per unit base, surface mounted (page 4 figure note 2) | 4 |
## CAD (KiCad official)
- Symbol: `SI1024X-T1-GE3`
- Footprint: `Package_TO_SOT_SMD:SOT-563`
- 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files: `si1024x-t1-ge3-etched.step` / `si1024x-t1-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `si1024x-t1-ge3.step` / `si1024x-t1-ge3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586202916746612736) (7 pp, sha256 `ce7a2ed23aba35a6`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/si1024x-t1-ge3-datasheet.pdf)