# SH8K41GZETB

**ROHM Semicon** · MOSFETs · SOP-8

SH8K41GZETB from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Tr1 source terminal of the first Nch MOSFET (VDSS 80V, ID ±3.4A). |
| 2 | G1 | input | Tr1 gate terminal with ESD protection diode; VGSS limit ±20V, threshold 1.0 to 2.5V. |
| 3 | S2 | passive | Tr2 source terminal of the second Nch MOSFET (VDSS 80V, ID ±3.4A). |
| 4 | G2 | input | Tr2 gate terminal with ESD protection diode; VGSS limit ±20V, threshold 1.0 to 2.5V. |
| 5 | D2 | passive | Tr2 drain terminal; VDSS 80V, continuous drain current ±3.4A, pulsed ±13.6A. |
| 6 | D2 | passive | Tr2 drain terminal (second drain pin, tied internally to pin 5); VDSS 80V, ±3.4A continuous. |
| 7 | D1 | passive | Tr1 drain terminal; VDSS 80V, continuous drain current ±3.4A, pulsed ±13.6A. |
| 8 | D1 | passive | Tr1 drain terminal (second drain pin, tied internally to pin 7); VDSS 80V, ±3.4A continuous. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS |  |  | 80 | V | Ta = 25°C | 1 |
| Continuous drain current | ID | -3.4 |  | 3.4 | A | Ta = 25°C | 1 |
| Pulsed drain current | IDP | -13.6 |  | 13.6 | A | Pw ≦ 10μs, Duty cycle ≦ 1% | 1 |
| Gate-Source voltage | VGSS | -20 |  | 20 | V | Ta = 25°C | 1 |
| Power dissipation (total), ceramic board | PD |  |  | 2 | W | Mounted on a ceramic board (30×30×0.8mm) | 1 |
| Power dissipation (total), FR4 | PD |  |  | 1.4 | W | Mounted on a FR4 (25×25×0.8mm) | 1 |
| Junction temperature | Tj |  |  | 150 | °C |  | 1 |
| Operating junction and storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance junction-ambient (total), ceramic board | RthJA |  |  | 62.5 | ℃/W | Mounted on a ceramic board (30×30×0.8mm) | 2 |
| Thermal resistance junction-ambient (total), FR4 | RthJA |  |  | 89.2 | ℃/W | Mounted on a FR4 (25×25×0.8mm) | 2 |
| Drain-Source breakdown voltage | V(BR)DSS | 80 |  |  | V | VGS = 0V, ID = 1mA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | μA | VDS = 80V, VGS = 0V | 2 |
| Gate-Source leakage current | IGSS | -10 |  | 10 | μA | VDS = 0V, VGS = ±20V | 2 |
| Gate threshold voltage | VGS(th) | 1 |  | 2.5 | V | VDS = 10V, ID = 1mA | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 90 | 130 | mΩ | VGS = 10V, ID = 3.4A | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 110 | 150 | mΩ | VGS = 4.5V, ID = 3.4A | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 120 | 160 | mΩ | VGS = 4.0V, ID = 3.4A | 2 |
| Forward transfer admittance | /Yfs/ | 3 |  |  | S | VDS = 10V, ID = 3.4A, pulsed | 2 |
| Body diode continuous forward current | IS |  |  | 1.6 | A | Ta = 25℃ | 3 |
| Body diode pulse forward current | ISP |  |  | 13.6 | A | Pw ≦ 10μs, Duty cycle ≦ 1% | 3 |
| Body diode forward voltage | VSD |  |  | 1.2 | V | VGS = 0V, IS = 1.6A | 3 |
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj |  | 81.3 |  | mV/℃ | ID = 1mA referenced to 25℃ | 2 |
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj |  | -4.4 |  | mV/℃ | ID = 1mA referenced to 25℃ | 2 |
| Gate resistance | RG |  | 5 |  | Ω | f = 1MHz, open drain | 2 |
| Input capacitance | Ciss |  | 600 |  | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 |
| Output capacitance | Coss |  | 100 |  | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 |
| Reverse transfer capacitance | Crss |  | 40 |  | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 |
| Turn-on delay time | td(on) |  | 12 |  | ns | VDD ⋍ 40V, VGS = 10V, ID = 1.7A, RL = 24Ω, RG = 10Ω | 3 |
| Rise time | tr |  | 15 |  | ns | VDD ⋍ 40V, VGS = 10V, ID = 1.7A, RL = 24Ω, RG = 10Ω | 3 |
| Turn-off delay time | td(off) |  | 40 |  | ns | VDD ⋍ 40V, VGS = 10V, ID = 1.7A, RL = 24Ω, RG = 10Ω | 3 |
| Fall time | tf |  | 12 |  | ns | VDD ⋍ 40V, VGS = 10V, ID = 1.7A, RL = 24Ω, RG = 10Ω | 3 |
| Total gate charge | Qg |  | 6.6 |  | nC | VDD ⋍ 40V, ID = 3.4A, VGS = 5.0V | 3 |
| Gate-Source charge | Qgs |  | 1.8 |  | nC | VDD ⋍ 40V, ID = 3.4A, VGS = 5.0V | 3 |
| Gate-Drain charge | Qgd |  | 2.2 |  | nC | VDD ⋍ 40V, ID = 3.4A, VGS = 5.0V | 3 |

## CAD (KiCad official)

- Symbol: `SH8K41GZETB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `sh8k41gzetb-etched.step` / `sh8k41gzetb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sh8k41gzetb.step` / `sh8k41gzetb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](docs/sh8k41gzetb-datasheet.pdf) (14 pp, sha256 `68246ac045b87db4`, retrieved 2026-10-31, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sh8k41gzetb-datasheet.pdf)