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SH8K25GZ0TB

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ROHM Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SH8K25GZ0TB

ROHM Semicon · MOSFETs · SOP-8

SH8K25GZ0TB from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of Tr1 (N-channel MOSFET, VDSS 40V, ID ±5.2A), with ESD protection diode to gate.
2 G1 input Gate of Tr1; VGSS rating ±12V, threshold 1.0 to 2.5V at VDS=10V, ID=1mA.
3 S2 passive Source of Tr2 (N-channel MOSFET, VDSS 40V, ID ±5.2A), with ESD protection diode to gate.
4 G2 input Gate of Tr2; VGSS rating ±12V, threshold 1.0 to 2.5V at VDS=10V, ID=1mA.
5 D2 passive Drain of Tr2, connected with pin 6; VDSS 40V, RDS(on) max 85mΩ at VGS=10V.
6 D2 passive Drain of Tr2, connected with pin 5; VDSS 40V, pulsed drain current ±8A.
7 D1 passive Drain of Tr1, connected with pin 8; VDSS 40V, RDS(on) max 85mΩ at VGS=10V.
8 D1 passive Drain of Tr1, connected with pin 7; VDSS 40V, pulsed drain current ±8A.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS 40 V 1
Continuous drain current ID -5.2 5.2 A *1 Pw ≤ 1s, Limited only by maximum temperature allowed. 1
Pulsed drain current IDP -8 8 A *2 Pw ≤ 10μs, Duty cycle ≤ 1% 1
Gate - Source voltage VGSS -12 12 V 1
Avalanche current, single pulse IAS 8 A *3 L ⋍ 10μH, VDD = 20V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2 1
Avalanche energy, single pulse EAS 0.48 mJ *3 L ⋍ 10μH, VDD = 20V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2 1
Power dissipation (total) PD 3 W *1 Pw ≤ 1s, Limited only by maximum temperature allowed. 1
Power dissipation (total) PD 2 W *4 Mounted on a ceramic board (30×30×0.8mm) 1
Power dissipation (total) PD 1.4 W *5 Mounted on a Cu board (40×40×0.8mm) 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Drain - Source breakdown voltage V(BR)DSS 40 V VGS = 0V, ID = 1mA 2
Zero gate voltage drain current IDSS 1 μA VDS = 40V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VGS = ±12V, VDS = 0V 2
Gate threshold voltage VGS(th) 1 2.5 V VDS = 10V, ID = 1mA 2
Static drain - source on - state resistance RDS(on) 85 mΩ VGS = 10V, ID = 5.2A 2
Static drain - source on - state resistance RDS(on) 112 mΩ VGS = 4.5V, ID = 4.0A 2
Forward transfer admittance /Yfs/ 1 S *6 VDS = 10V, ID = 4A 2
Continuous forward current (body diode) IS 1.6 A Ta = 25℃ 3
Pulse forward current (body diode) ISP 8 A *2 Pw ≤ 10μs, Duty cycle ≤ 1% 3
Forward voltage VSD 1.2 V *6 VGS = 0V, IS = 4A 3
Thermal resistance, junction - ambient (total) RthJA 62.5 ℃/W *4 Mounted on a ceramic board (30×30×0.8mm) 2
Thermal resistance, junction - ambient (total) RthJA 89.2 ℃/W *5 Mounted on a Cu board (40×40×0.8mm) 2

CAD (KiCad official)

  • Symbol: SH8K25GZ0TB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: sh8k25gz0tb-etched.step / sh8k25gz0tb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sh8k25gz0tb.step / sh8k25gz0tb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (14 pp, sha256 5335204a5342e2b8, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF