component
SH8K25GZ0TB
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSH8K25GZ0TB
ROHM Semicon · MOSFETs · SOP-8
SH8K25GZ0TB from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of Tr1 (N-channel MOSFET, VDSS 40V, ID ±5.2A), with ESD protection diode to gate. |
| 2 | G1 | input | Gate of Tr1; VGSS rating ±12V, threshold 1.0 to 2.5V at VDS=10V, ID=1mA. |
| 3 | S2 | passive | Source of Tr2 (N-channel MOSFET, VDSS 40V, ID ±5.2A), with ESD protection diode to gate. |
| 4 | G2 | input | Gate of Tr2; VGSS rating ±12V, threshold 1.0 to 2.5V at VDS=10V, ID=1mA. |
| 5 | D2 | passive | Drain of Tr2, connected with pin 6; VDSS 40V, RDS(on) max 85mΩ at VGS=10V. |
| 6 | D2 | passive | Drain of Tr2, connected with pin 5; VDSS 40V, pulsed drain current ±8A. |
| 7 | D1 | passive | Drain of Tr1, connected with pin 8; VDSS 40V, RDS(on) max 85mΩ at VGS=10V. |
| 8 | D1 | passive | Drain of Tr1, connected with pin 7; VDSS 40V, pulsed drain current ±8A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | 40 | V | 1 | |||
| Continuous drain current | ID | -5.2 | 5.2 | A | *1 Pw ≤ 1s, Limited only by maximum temperature allowed. | 1 | |
| Pulsed drain current | IDP | -8 | 8 | A | *2 Pw ≤ 10μs, Duty cycle ≤ 1% | 1 | |
| Gate - Source voltage | VGSS | -12 | 12 | V | 1 | ||
| Avalanche current, single pulse | IAS | 8 | A | *3 L ⋍ 10μH, VDD = 20V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2 | 1 | ||
| Avalanche energy, single pulse | EAS | 0.48 | mJ | *3 L ⋍ 10μH, VDD = 20V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2 | 1 | ||
| Power dissipation (total) | PD | 3 | W | *1 Pw ≤ 1s, Limited only by maximum temperature allowed. | 1 | ||
| Power dissipation (total) | PD | 2 | W | *4 Mounted on a ceramic board (30×30×0.8mm) | 1 | ||
| Power dissipation (total) | PD | 1.4 | W | *5 Mounted on a Cu board (40×40×0.8mm) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Drain - Source breakdown voltage | V(BR)DSS | 40 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 40V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | VGS = ±12V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 2.5 | V | VDS = 10V, ID = 1mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 85 | mΩ | VGS = 10V, ID = 5.2A | 2 | ||
| Static drain - source on - state resistance | RDS(on) | 112 | mΩ | VGS = 4.5V, ID = 4.0A | 2 | ||
| Forward transfer admittance | /Yfs/ | 1 | S | *6 VDS = 10V, ID = 4A | 2 | ||
| Continuous forward current (body diode) | IS | 1.6 | A | Ta = 25℃ | 3 | ||
| Pulse forward current (body diode) | ISP | 8 | A | *2 Pw ≤ 10μs, Duty cycle ≤ 1% | 3 | ||
| Forward voltage | VSD | 1.2 | V | *6 VGS = 0V, IS = 4A | 3 | ||
| Thermal resistance, junction - ambient (total) | RthJA | 62.5 | ℃/W | *4 Mounted on a ceramic board (30×30×0.8mm) | 2 | ||
| Thermal resistance, junction - ambient (total) | RthJA | 89.2 | ℃/W | *5 Mounted on a Cu board (40×40×0.8mm) | 2 |
CAD (KiCad official)
- Symbol:
SH8K25GZ0TB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
sh8k25gz0tb-etched.step/sh8k25gz0tb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sh8k25gz0tb.step/sh8k25gz0tb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (14 pp, sha256
5335204a5342e2b8, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).