SGT50T65FD1P7

{
  "slug": "sgt50t65fd1p7",
  "version": "0.1.0",
  "type": "component",
  "description": "Hangzhou Silan Microelectronics IGBTs, TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
    "component",
    "triode-mos tube-transistor",
    "sgt50t65fd1p7",
    "factory-2.0.0",
    "extractor-text"
  ],
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
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    "README.md",
    "sgt50t65fd1p7.kicad_sym",
    "sgt50t65fd1p7.kicad_mod",
    "sgt50t65fd1p7.glb",
    "sgt50t65fd1p7.step",
    "sgt50t65fd1p7.lbr",
    "docs/hero.png",
    "docs/sgt50t65fd1p7-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "sgt50t65fd1p7-hero.glb",
    "sgt50t65fd1p7-hero.overlay.json",
    "sgt50t65fd1p7-etched.glb"
  ],
  "component": {
    "mpn": "SGT50T65FD1P7",
    "manufacturer": "Hangzhou Silan Microelectronics",
    "package": "TO-247-3L",
    "pin_count": 3,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "IGBTs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/8e237bfb172d928c8d9f8591e2022bcc.pdf",
    "parts": {
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      "model_3d_plain": "sgt50t65fd1p7-etched.glb",
      "model_3d_step": "sgt50t65fd1p7-etched.step",
      "model_3d_step_plain": "sgt50t65fd1p7.step",
      "lbr": "sgt50t65fd1p7.lbr"
    },
    "distributor_links": {
      "lcsc": "C5123272"
    },
    "distributor_check": {
      "checked_at": "2026-10-22T22:15:09Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
        "status": "quota"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate; voltage limit VGE ±20 V (transient VGEM ±30 V), threshold VGE(th) 4.0 V min, 5.0 V typ, 6.5 V max at IC=250 µA."
      },
      {
        "number": "2",
        "name": "C",
        "type": "passive",
        "description": "Collector; VCE max 650 V, IC 100 A at TC=25 °C and 50 A at TC=100 °C, pulsed ICM 150 A, VCE(sat) typ 2.0 V at IC=50 A."
      },
      {
        "number": "3",
        "name": "E",
        "type": "passive",
        "description": "Emitter; main current return of the IGBT and anode of the co-packed fast recovery diode (IF 25 A)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet text lists the labels 'C G E' alongside pin numbers '1 2 3' (from the symbol drawing) "
        ],
        "pages_sent": 9,
        "cost_usd": 0.1137,
        "at": "2026-10-22T22:14:48"
      },
      "datasheet": {
        "url": "https://datasheet.lcsc.com/datasheet/pdf/8e237bfb172d928c8d9f8591e2022bcc.pdf",
        "pages": 9,
        "sha256": "02ec8394b4e77afb",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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        "checked": "2026-10-22",
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}