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SGT50T65FD1P7
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Hangzhou Silan Microelectronics IGBTs, TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSGT50T65FD1P7
Hangzhou Silan Microelectronics · IGBTs · TO-247-3L
SGT50T65FD1P7 from Hangzhou Silan Microelectronics, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; voltage limit VGE ±20 V (transient VGEM ±30 V), threshold VGE(th) 4.0 V min, 5.0 V typ, 6.5 V max at IC=250 µA. |
| 2 | C | passive | Collector; VCE max 650 V, IC 100 A at TC=25 °C and 50 A at TC=100 °C, pulsed ICM 150 A, VCE(sat) typ 2.0 V at IC=50 A. |
| 3 | E | passive | Emitter; main current return of the IGBT and anode of the co-packed fast recovery diode (IF 25 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-247-3L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | 650 | V | TC=25C | 2 | ||
| Gate-emitter voltage | VGE | -20 | 20 | V | TC=25C | 2 | |
| Transient gate-emitter voltage | VGEM | -30 | 30 | V | TC=25C | 2 | |
| Collector current | IC | 100 | A | TC=25C | 2 | ||
| Collector current | IC | 50 | A | TC=100C | 2 | ||
| Pulsed collector current | ICM | 150 | A | TC=25C | 2 | ||
| Diode current | IF | 25 | A | TC=25C | 2 | ||
| Power dissipation | PD | 235 | W | TC=25C | 2 | ||
| Operating junction temperature | TJ | -55 | 150 | C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | C | 2 | ||
| Thermal resistance junction-case (IGBT) | RθJC | 0.53 | C/W | 2 | |||
| Thermal resistance junction-case (FRD) | RθJC | 1.48 | C/W | 2 | |||
| Collector-emitter breakdown voltage | BVCE | 650 | V | VGE=0V, IC=250uA | 3 | ||
| Collector-emitter leakage current | ICES | 200 | uA | VCE=600V, VGE=0V | 3 | ||
| Gate-emitter leakage current | IGES | -400 | 400 | nA | VGE=20V, VCE=0V | 3 | |
| Gate threshold voltage | VGE(th) | 4 | 5 | 6.5 | V | IC=250uA, VCE=VGE | 3 |
| Collector-emitter saturation voltage | VCE(sat) | 2 | V | IC=50A, VGE=15V, TC=25C | 3 | ||
| Collector-emitter saturation voltage | VCE(sat) | 2.2 | V | IC=50A, VGE=15V, TC=125C | 3 | ||
| Input capacitance | Cies | 4500 | pF | VCE=30V, VGE=0V, f=1MHz | 3 | ||
| Output capacitance | Coes | 100 | pF | VCE=30V, VGE=0V, f=1MHz | 3 | ||
| Reverse transfer capacitance | Cres | 42 | pF | VCE=30V, VGE=0V, f=1MHz | 3 | ||
| Turn-on delay time | Td(on) | 45 | ns | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, inductive load | 3 | ||
| Turn-on rise time | Tr | 145 | ns | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, inductive load | 3 | ||
| Turn-off delay time | Td(off) | 125 | ns | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, inductive load | 3 | ||
| Turn-off fall time | Tf | 130 | ns | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, inductive load | 3 | ||
| Turn-on energy | Eon | 2.8 | mJ | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, inductive load | 3 | ||
| Turn-off energy | Eoff | 1 | mJ | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, inductive load | 3 | ||
| Total switching energy | Est | 3.8 | mJ | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, inductive load | 3 | ||
| Total gate charge | Qg | 148 | nC | VCE=400V, IC=50A, VGE=15V | 3 | ||
| Gate-emitter charge | Qge | 46 | nC | VCE=400V, IC=50A, VGE=15V | 3 | ||
| Gate-collector charge | Qgc | 44 | nC | VCE=400V, IC=50A, VGE=15V | 3 | ||
| Diode forward voltage | VFM | 1.95 | V | IF=25A, TC=25C | 3 | ||
| Diode forward voltage | VFM | 1.7 | V | IF=25A, TC=125C | 3 | ||
| Diode reverse recovery time | Trr | 33 | ns | IEC=25A, dIEC/dt=200A/μs | 3 | ||
| Diode reverse recovery charge | Qrr | 65 | nC | IEC=25A, dIEC/dt=200A/μs | 3 |
CAD (KiCad official)
- Symbol:
SGT50T65FD1P7 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files:
sgt50t65fd1p7-etched.step/sgt50t65fd1p7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sgt50t65fd1p7.step/sgt50t65fd1p7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (9 pp, sha256
02ec8394b4e77afb, retrieved 2026-10-22, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).