component
SFG08R06DF
Public Made by Adomby adom
ORIENTAL SEMI MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSFG08R06DF
ORIENTAL SEMI · MOSFETs · TO-252-2
SFG08R06DF from ORIENTAL SEMI, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of 1.0 V min to 2.5 V max at VDS=VGS, ID=250 μA. |
| 2 | D | passive | Drain (middle lead and the exposed tab); VDS rated 80 V, continuous ID 100 A at TC=25 °C and pulsed ID 300 A. |
| 3 | S | passive | Source; continuous body-diode forward current IS is 100 A at TC=25 °C (pulsed 300 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ORIENTAL SEMI |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source leakage current (VGS=-20 V) | IGSS | -100 | nA | VGS=-20 V | 2 | ||
| Gate-source leakage current (VGS=20 V) | IGSS | 100 | nA | VGS=20 V | 2 | ||
| Drain-source breakdown voltage | BVDSS | 80 | V | VGS=0 V, ID=250 μA | 2 | ||
| Gate threshold voltage | VGS(th) | 1 | 2.5 | V | VDS=VGS, ID=250 μA | 2 | |
| Drain-source on-state resistance (VGS=10 V) | RDS(ON) | 5.5 | 6.5 | mΩ | VGS=10 V, ID=12 A | 2 | |
| Drain-source on-state resistance (VGS=4.5 V) | RDS(ON) | 7.5 | 9 | mΩ | VGS=4.5 V, ID=10 A | 2 | |
| Drain-source leakage current | IDSS | 1 | μA | VDS=80 V, VGS=0 V | 2 | ||
| Drain-source voltage | VDS | 80 | V | 2 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous drain current | ID | 100 | A | TC=25 °C | 2 | ||
| Pulsed drain current | ID, pulse | 300 | A | TC=25 °C | 2 | ||
| Continuous diode forward current | IS | 100 | A | TC=25 °C | 2 | ||
| Diode pulsed current | IS, pulse | 300 | A | TC=25 °C | 2 | ||
| Power dissipation | PD | 148 | W | TC=25 °C | 2 | ||
| Single pulsed avalanche energy | EAS | 80 | mJ | 2 | |||
| Operation and storage temperature | Tstg, Tj | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction-case | RθJC | 0.84 | °C/W | 2 | |||
| Thermal resistance, junction-ambient | RθJA | 62 | °C/W | Device mounted on 1 in² FR-4 board with 2oz. Cu, still air, Ta=25 °C | 2 |
CAD (KiCad official)
- Symbol:
SFG08R06DF - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
sfg08r06df-etched.step/sfg08r06df-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sfg08r06df.step/sfg08r06df.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ORIENTAL SEMI datasheet (8 pp, sha256
47eb8cbc7f000d76, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).