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SED5852

Public Made by Adom

by adom

SINO-IC MOSFETs, DFN-6-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SED5852

SINO-IC · MOSFETs · DFN-6-EP(2x2)

SED5852 from SINO-IC, in a DFN-6-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Schottky diode anode (pin 1), rated for reverse voltage VKA of 20V and forward current IF of 1A.
2 NC unconnected No connect pin.
3 D passive P-channel MOSFET drain, rated VDS -20V and continuous ID -3.2A at TA=25C; also tied to the D pad on the package underside.
4 S passive P-channel MOSFET source.
5 G input P-channel MOSFET gate, with a gate-source voltage limit of ±8V.
6 C passive Schottky diode cathode (pin 6); also tied to the C pad on the package underside.
7 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer SINO-IC
Package DFN-6-EP(2x2)
Category Transistors
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -20 V ID= -250uA,VGS=0V 2
Zero Gate Voltage Drain Current IDSS -1 uA VDS= -16V,VGS=0V 2
Zero Gate Voltage Drain Current IDSS -5 uA VDS= -16V,VGS=0V (TJ=55℃) 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±8V 2
Gate Threshold Voltage VGS(IN) -1 -0.63 -0.3 V VDS= VGS, ID= -250uA 2
On state drain current ID(ON) -15 A VGS= -4.5V, VDS=-5V 2
Static Drain-Source On-Resistance RDS(ON) 73 90 mΩ VGS= -4.5V, ID= -3.4A 2
Static Drain-Source On-Resistance RDS(ON) 99 120 mΩ VGS= -2.5V, ID= -2.5A 2
Static Drain-Source On-Resistance RDS(ON) 133 160 mΩ VGS= -1.8V, ID= -1.5A 2
Forward Transconductance gFS 4 7 S VGS= -5V, ID= -2.0A 2
Diode Forward Voltage VSD -0.83 -1 V VGS= 0V, IS= -1A 2
Maximum Body-Diode Continuous Current IS -2 A 2
Schottky Forward Voltage Drop VF 0.39 0.5 V IF= 0.5A 2
Schottky Maximum reverse leakage current Irm 0.05 mA VR=16V 2
Schottky Maximum reverse leakage current Irm 10 mA VR= 16V, TJ=125℃ 2
Schottky Reverse Recovery Time trr 5.2 10 Ns IF = 1A,dI/dt=100A/us 2
Drain-Source Voltage VDS -20 V MOSFET, Ta=25℃ 1
Gate-Source Voltage VGS -8 8 V MOSFET, Ta=25℃ 1
Continuous Drain Current ID -3.2 A TA =25℃ 1
Continuous Drain Current ID -2.7 A TA =70℃ 1
Pulsed Drain Current IDM -15 A 1
Schottky reverse voltage VKA 20 V 1
Schottky Continuous Forward Current IF 1.9 A TA =25℃ 1
Schottky Continuous Forward Current IF 1.2 A TA =70℃ 1
Schottky Pulsed Forward Current IFM 7 A 1
MOSFET Power Dissipation PD 1.7 W TA =25℃ 1
MOSFET Power Dissipation PD 1.1 W TA =70℃ 1
Schottky Power Dissipation PD 0.96 W TA =25℃ 1
Schottky Power Dissipation PD 0.62 W TA =70℃ 1
MOSFET Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Schottky Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
MOSFET Junction-to-Ambient RθJA 51 75 ℃/W t ≤ 10s 1
MOSFET Junction-to-Ambient RθJA 88 110 ℃/W Steady-State 1
MOSFET Junction-to-Lead RθJL 28 35 ℃/W Steady-State 1
Schottky Junction-to-Ambient RθJA 66 80 ℃/W t ≤ 10s 1
Schottky Junction-to-Ambient RθJA 95 130 ℃/W Steady-State 1
Schottky Junction-to-Lead RθJL 40 50 ℃/W Steady-State 1
Input Capacitance CISS 540 pF VGS= 0V, VDS= -10V,f= 1MHz 2
Output Capacitance COSS 72 pF VGS= 0V, VDS= -10V,f= 1MHz 2
Reverse Transfer Capacitance CRSS 49 pF VGS= 0V, VDS= -10V,f= 1MHz 2
Gate resistance Rg 12 Ω VGS= 0V, VDS= 0V,f= 1MHz 2
Total Gate Charge Qg 6.1 nC VGS=-4.5V,VDS=-10V,ID= -3.4A 2
Gate Source Charge Qgs 0.6 nC VGS=-4.5V,VDS=-10V,ID= -3.4A 2
Gate Drain Charge Qgd 16 nC VGS=-4.5V,VDS=-10V,ID= -3.4A 2
Turn-On DelayTime TD(on) 10 ns VGS= -4.5V, VDS= -10V, RL= 2.9Ω, RGEN= 3Ω 2
Turn-On Rise Time tr 12 ns VGS= -4.5V, VDS= -10V, RL= 2.9Ω, RGEN= 3Ω 2
Turn-Off DelayTime TD(off) 44 ns VGS= -4.5V, VDS= -10V, RL= 2.9Ω, RGEN= 3Ω 2
Turn-Off Fall Time tf 22 ns VGS= -4.5V, VDS= -10V, RL= 2.9Ω, RGEN= 3Ω 2
Reverse Recovery Time trr 21 ns IF = -3.4A,dI/dt=100A/us 2
Reverse Recovery Charge Qrr 7.5 nC IF = -3.4A,dI/dt=100A/us 2
Schottky Junction Capacitance CT 34 pF VR= 10V 2
Schottky Reverse Recovery Charge Qrr 0.8 nC IF = 1A,dI/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SED5852
  • Footprint: Package_DFN_QFN:DFN-6-1EP_2x2mm_P0.65mm_EP1x1.6mm
  • 3D model: DFN-6-EP(2x2) (KiCad packages3D, STEP)
  • 3D model files: sed5852-etched.step / sed5852-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sed5852.step / sed5852.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO-IC datasheet (7 pp, sha256 610dc07b3e390cb2, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF