component
SED5852
Public Made by Adomby adom
SINO-IC MOSFETs, DFN-6-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSED5852
SINO-IC · MOSFETs · DFN-6-EP(2x2)
SED5852 from SINO-IC, in a DFN-6-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Schottky diode anode (pin 1), rated for reverse voltage VKA of 20V and forward current IF of 1A. |
| 2 | NC | unconnected | No connect pin. |
| 3 | D | passive | P-channel MOSFET drain, rated VDS -20V and continuous ID -3.2A at TA=25C; also tied to the D pad on the package underside. |
| 4 | S | passive | P-channel MOSFET source. |
| 5 | G | input | P-channel MOSFET gate, with a gate-source voltage limit of ±8V. |
| 6 | C | passive | Schottky diode cathode (pin 6); also tied to the C pad on the package underside. |
| 7 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO-IC |
| Package | DFN-6-EP(2x2) |
| Category | Transistors |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID= -250uA,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS= -16V,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | uA | VDS= -16V,VGS=0V (TJ=55℃) | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±8V | 2 | |
| Gate Threshold Voltage | VGS(IN) | -1 | -0.63 | -0.3 | V | VDS= VGS, ID= -250uA | 2 |
| On state drain current | ID(ON) | -15 | A | VGS= -4.5V, VDS=-5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 73 | 90 | mΩ | VGS= -4.5V, ID= -3.4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 99 | 120 | mΩ | VGS= -2.5V, ID= -2.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 133 | 160 | mΩ | VGS= -1.8V, ID= -1.5A | 2 | |
| Forward Transconductance | gFS | 4 | 7 | S | VGS= -5V, ID= -2.0A | 2 | |
| Diode Forward Voltage | VSD | -0.83 | -1 | V | VGS= 0V, IS= -1A | 2 | |
| Maximum Body-Diode Continuous Current | IS | -2 | A | 2 | |||
| Schottky Forward Voltage Drop | VF | 0.39 | 0.5 | V | IF= 0.5A | 2 | |
| Schottky Maximum reverse leakage current | Irm | 0.05 | mA | VR=16V | 2 | ||
| Schottky Maximum reverse leakage current | Irm | 10 | mA | VR= 16V, TJ=125℃ | 2 | ||
| Schottky Reverse Recovery Time | trr | 5.2 | 10 | Ns | IF = 1A,dI/dt=100A/us | 2 | |
| Drain-Source Voltage | VDS | -20 | V | MOSFET, Ta=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -8 | 8 | V | MOSFET, Ta=25℃ | 1 | |
| Continuous Drain Current | ID | -3.2 | A | TA =25℃ | 1 | ||
| Continuous Drain Current | ID | -2.7 | A | TA =70℃ | 1 | ||
| Pulsed Drain Current | IDM | -15 | A | 1 | |||
| Schottky reverse voltage | VKA | 20 | V | 1 | |||
| Schottky Continuous Forward Current | IF | 1.9 | A | TA =25℃ | 1 | ||
| Schottky Continuous Forward Current | IF | 1.2 | A | TA =70℃ | 1 | ||
| Schottky Pulsed Forward Current | IFM | 7 | A | 1 | |||
| MOSFET Power Dissipation | PD | 1.7 | W | TA =25℃ | 1 | ||
| MOSFET Power Dissipation | PD | 1.1 | W | TA =70℃ | 1 | ||
| Schottky Power Dissipation | PD | 0.96 | W | TA =25℃ | 1 | ||
| Schottky Power Dissipation | PD | 0.62 | W | TA =70℃ | 1 | ||
| MOSFET Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Schottky Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| MOSFET Junction-to-Ambient | RθJA | 51 | 75 | ℃/W | t ≤ 10s | 1 | |
| MOSFET Junction-to-Ambient | RθJA | 88 | 110 | ℃/W | Steady-State | 1 | |
| MOSFET Junction-to-Lead | RθJL | 28 | 35 | ℃/W | Steady-State | 1 | |
| Schottky Junction-to-Ambient | RθJA | 66 | 80 | ℃/W | t ≤ 10s | 1 | |
| Schottky Junction-to-Ambient | RθJA | 95 | 130 | ℃/W | Steady-State | 1 | |
| Schottky Junction-to-Lead | RθJL | 40 | 50 | ℃/W | Steady-State | 1 | |
| Input Capacitance | CISS | 540 | pF | VGS= 0V, VDS= -10V,f= 1MHz | 2 | ||
| Output Capacitance | COSS | 72 | pF | VGS= 0V, VDS= -10V,f= 1MHz | 2 | ||
| Reverse Transfer Capacitance | CRSS | 49 | pF | VGS= 0V, VDS= -10V,f= 1MHz | 2 | ||
| Gate resistance | Rg | 12 | Ω | VGS= 0V, VDS= 0V,f= 1MHz | 2 | ||
| Total Gate Charge | Qg | 6.1 | nC | VGS=-4.5V,VDS=-10V,ID= -3.4A | 2 | ||
| Gate Source Charge | Qgs | 0.6 | nC | VGS=-4.5V,VDS=-10V,ID= -3.4A | 2 | ||
| Gate Drain Charge | Qgd | 16 | nC | VGS=-4.5V,VDS=-10V,ID= -3.4A | 2 | ||
| Turn-On DelayTime | TD(on) | 10 | ns | VGS= -4.5V, VDS= -10V, RL= 2.9Ω, RGEN= 3Ω | 2 | ||
| Turn-On Rise Time | tr | 12 | ns | VGS= -4.5V, VDS= -10V, RL= 2.9Ω, RGEN= 3Ω | 2 | ||
| Turn-Off DelayTime | TD(off) | 44 | ns | VGS= -4.5V, VDS= -10V, RL= 2.9Ω, RGEN= 3Ω | 2 | ||
| Turn-Off Fall Time | tf | 22 | ns | VGS= -4.5V, VDS= -10V, RL= 2.9Ω, RGEN= 3Ω | 2 | ||
| Reverse Recovery Time | trr | 21 | ns | IF = -3.4A,dI/dt=100A/us | 2 | ||
| Reverse Recovery Charge | Qrr | 7.5 | nC | IF = -3.4A,dI/dt=100A/us | 2 | ||
| Schottky Junction Capacitance | CT | 34 | pF | VR= 10V | 2 | ||
| Schottky Reverse Recovery Charge | Qrr | 0.8 | nC | IF = 1A,dI/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
SED5852 - Footprint:
Package_DFN_QFN:DFN-6-1EP_2x2mm_P0.65mm_EP1x1.6mm - 3D model: DFN-6-EP(2x2) (KiCad packages3D, STEP)
- 3D model files:
sed5852-etched.step/sed5852-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sed5852.step/sed5852.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO-IC datasheet (7 pp, sha256
610dc07b3e390cb2, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).